Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Elif Balkas"'
Autor:
Elif Balkas, Edward Van Brunt, Robert Tyler Leonard, Ed Hutchins, Matthew Conrad, Jeffrey Giles
Publikováno v:
Materials Science Forum. 1004:321-327
A non-destructive, fast and accurate extended defect counting method on large diameter SiC wafers is presented. Photoluminescence (PL) signals from extended defects on 4H-SiC substrates were correlated to the specific etch features of Basal Plane Dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77034e7323645414ba33634ccf7f290b
https://doi.org/10.4028/www.scientific.net/msf.1004.321
https://doi.org/10.4028/www.scientific.net/msf.1004.321
Autor:
Brett Hull, Al Burk, Donald A. Gajewski, Michael J. O'Loughlin, Yuri I. Khlebnikov, Jim Richmond, Scott Allen, Elif Balkas, John W. Palmour, Sei Hyung Ryu, Edward Van Brunt
Publikováno v:
Materials Science Forum. 963:805-810
In this work, we report the results of industrial qualification tests run on medium voltage SiC MOSFETs rated for 3.3 kV/40 A and 10 kV/15 A. The JEDEC JESD47J.01 standard was used as a guideline to conduct HTRB (High Temperature, Reverse Bias), HTGB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::523af28e3adf72bb961e531a0b599323
https://doi.org/10.4028/www.scientific.net/msf.963.805
https://doi.org/10.4028/www.scientific.net/msf.963.805
Autor:
Adrian Powell, Jyothirmai Ambati, Albert A. Burk, Joseph John Sumakeris, Jeff Seaman, M. O’Loughlin, Michael James Paisley, Simon Bubel, Robert Tyler Leonard, Elif Balkas, Yuri I. Khlebnikov
Publikováno v:
Materials Science Forum. 897:226-229
In this work, aggregate epitaxial carrot distributions are observed at the crystal, wafer and dislocation defect levels, instead of individual extended carrot defect level. From combining large volumes of data, carrots are observed when both threadin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::586ee7fa33684576303fa24652d16532
https://doi.org/10.4028/www.scientific.net/msf.897.226
https://doi.org/10.4028/www.scientific.net/msf.897.226
Autor:
Jyothi Ambati, Albert A. Burk, Jeff Seaman, Chris Horton, Sumit Gangwal, Jianqiu Guo, Elif Balkas, Michael Dudley, Adrian Powell, Yuri I. Khlebnikov, Joseph John Sumakeris, Michael James Paisley, Valeri F Tsevtkov, R.T. Leonard, Andy McClure, M. O’Loughlin, Olek Kramarenko, Eugene Deyneka, Varad R. Sakhalkar
Publikováno v:
Materials Science Forum. 858:5-10
The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::053b3c67667a0ddf22a99f7b8b86f646
https://doi.org/10.4028/www.scientific.net/msf.858.5
https://doi.org/10.4028/www.scientific.net/msf.858.5
Autor:
Valeri F Tsevtkov, Jianqiu Guo, Adrian Powell, Michael James Paisley, Robert Tyler Leonard, Eugene Deyneka, Jeff Seaman, Yu Yang, Michael Dudley, Yuri I. Khlebnikov, Elif Balkas, Joseph John Sumakeris
Publikováno v:
Materials Science Forum. 858:393-396
Definitive correlations are presented between specific types of dislocations identified via Synchrotron White Beam X-Ray Topography (SWBXRT) and identified via selective etching of 4H-SiC substrates. A variety of etch conditions and the results on di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cae526e8494e9312e75ec7f805db01ee
https://doi.org/10.4028/www.scientific.net/msf.858.393
https://doi.org/10.4028/www.scientific.net/msf.858.393