Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Eliezer Dovid Richmond"'
Autor:
Eliezer Dovid Richmond
Publikováno v:
Thin Solid Films. 252:98-104
The growth kinetics of Ge on Si(001) is determined from the X-ray photoelectron measurements of the Si 2p core level intensity and the Ge 2p 3 2 core level intensity as a function of the Ge overlayer thickness. The growth kinetics of the Ge overlayer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44831dd74bc1b0b5a33fa2c62183c174
https://doi.org/10.1016/0040-6090(94)90780-3
https://doi.org/10.1016/0040-6090(94)90780-3
Publikováno v:
Thin Solid Films. 192:287-294
The dramatically different and superior properties of molecular beam epitaxy (MBE) of silicon on sapphire (SOS) have been investigated and compared with standard commercially available chemically vapor deposition (CVD) SOS. X-ray diffraction reveals
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d251632852bec75460be13d603af9b67
https://doi.org/10.1016/0040-6090(90)90073-m
https://doi.org/10.1016/0040-6090(90)90073-m
Publikováno v:
Journal of Applied Physics. 67:3706-3710
For heteroepitaxial systems, such as silicon on sapphire, microtwins can usually be observed in the epitaxial layer. It has also been suggested that microtwins play a significant role in strain relief in these systems. From a knowledge of the differe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dbe7e3f328b74c6abd98972a4edabcd
https://doi.org/10.1063/1.345036
https://doi.org/10.1063/1.345036
Publikováno v:
Thin Solid Films. 184:379-386
Single-crystal germanium has been grown on sapphire (1102) by molecular beam epitaxy. Germanium grows (110) when growth temperatures exceed 700°C, and the sapphire substrates have been preannealed above 1100°C. The in-plane registry was determined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4c427024a116284cf12907d0a16ab36
https://doi.org/10.1016/0040-6090(90)90435-g
https://doi.org/10.1016/0040-6090(90)90435-g
Autor:
Mark E. Twigg, Eliezer Dovid Richmond, Syed B. Qadri, Michael T. Duffey, Joseph G. Pellegrino
Publikováno v:
Applied Physics Letters. 56:2551-2553
Molecular beam epitaxy (MBE) of Si on sapphire (SOS) has dramatically different and superior properties compared to chemical vapor deposited (CVD) SOS. The strain in the Si epilayer decreases by 21%. A 40% higher electron Hall mobility occurs at room
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4c530da88df6e4e6a026ac1d30a1175
https://doi.org/10.1063/1.102884
https://doi.org/10.1063/1.102884
Autor:
Joseph G. Pellegrino, Eliezer Dovid Richmond, Syed B. Qadri, Adriana Giordana, Keith A. Joyner, Gordon P. Pollack, Mark E. Twigg, Robert Glosser
Publikováno v:
MRS Proceedings. 188
Photoreflectance (PR) was used to study crystalline quality and stress in silicon films on insulator. The position and amplitude of the 3.4 eV PR silicon structure was monitored for both MBE silicon on sapphire (SOS) and SIMOX structures. The SOS fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1001591e961ed2c2a133332cc9c426ef
https://doi.org/10.1557/proc-188-349
https://doi.org/10.1557/proc-188-349
Publikováno v:
Thin Solid Films. 93:347-357
The structural defect properties of silicon on sapphire (SOS) are investigated with transmission electron microscopy and Rutherford backscattering. The results for as-grown SOS films are compared with SOS films which have been implanted with 1016 Si+
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4162bf4680645903c78783c1da2faf0
https://doi.org/10.1016/0040-6090(82)90141-9
https://doi.org/10.1016/0040-6090(82)90141-9
Publikováno v:
Materials Letters. 8:64-68
Photoreflectance was used for the first time to study silicon films on sapphire (SOS). The film thicknesses ranged from 150 to 40 000 A. The 3.4 eV structure was monitored with bulk silicon as a standard. A shift of this structure toward lower energi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::902670dc6e33423027bb381c6dd5a458
https://doi.org/10.1016/0167-577x(89)90099-2
https://doi.org/10.1016/0167-577x(89)90099-2
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2:569-573
A comprehensive matrix study of the material modification of chemical vapor deposited silicon on sapphire has been made. The modification is effected by applying twice the process of ion implantation with 28 Si+ ions followed by solid phase epitaxial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac76efb6c0daabb78d42e32bb4a5d15a
https://doi.org/10.1116/1.572448
https://doi.org/10.1116/1.572448
Publikováno v:
Journal of Crystal Growth. 80:191-197
Optimization of the double solid phase epitaxial regrowth process to improve SOS material is investigated. In this study, the ion implantation fluence used to form an amorphous silicon layer is the variable of interest. The energy of the ions is eith
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aae7836ecbe30a46ee1dcec5303ae1e4
https://doi.org/10.1016/0022-0248(87)90536-7
https://doi.org/10.1016/0022-0248(87)90536-7