Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Elias Urrejola"'
Autor:
Daniel Diaz Almeida, Rodrigo Castillo, Enrique Cabrera, Aitor Marzo, Elias Urrejola, Darío Espinoza, Jaime Llanos, Pablo Ferrada, Carlos Portillo
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
The implementation of a different approach for the estimation of the maximum photo-generated current density ($J_{\max}$) regarding internal parameters of the cell and its optical performance was performed introducing an effective optical pathlength
Autor:
Rodrigo Escobar, Cristián E. Cortés, J. Antonanzas, Alan Pino, Elias Urrejola, Gonzalo Ramírez-Sagner, Paulo Ayala, Marcelo Salgado
The performance, yearly degradation, and annual yield of photovoltaic systems have been studied in outdoor exposure for two years period 2014–2015 in Santiago, capital of Chile. Photovoltaic panels performance degrades daily in a rate between −0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eab1c934edf8b1a133bcb67e3b0e4a06
https://publica.fraunhofer.de/handle/publica/244317
https://publica.fraunhofer.de/handle/publica/244317
Publikováno v:
Journal of Applied Physics. 110:056104
We study the influence of the gravity field orientation on the microstructure of Al–Si forming alloy. Due to the difference between the diffusivity of aluminum and silicon, Kirkendall void formations are normally found at the back of rear-passivate
Publikováno v:
Applied Physics Letters. 98:199903
Publikováno v:
Applied Physics Letters. 98:153508
We show that the lateral spread of silicon in a screen-printed aluminum layer increases by (1.50±0.06) μm/°C, when increasing the peak firing temperature within an industrially applicable range. In this way, the maximum spread limit of diffused si
Publikováno v:
Journal of Applied Physics. 107:124516
For high efficiency silicon solar cells, the rear surface passivation by a dielectric layer has significant advantages compared to the standard fully covered Al back-contact structure. In this work the rear contact formation of the passivated emitter
Publikováno v:
Energy Procedia. :470-477
Bifaciality offers a high potential to increase the efficiency of industrial silicon solar cells and their integration to sustainable building design. However, not enough work has been presented on doped dielectrics for bifacial solar cells. In this