Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Elias Kluth"'
Autor:
Sida Wang, Phil Liebing, Martin Feneberg, Farid M. Sroor, Felix Engelhardt, Liane Hilfert, Sabine Busse, Elias Kluth, Rüdiger Goldhahn, Frank T. Edelmann
Publikováno v:
European Journal of Inorganic Chemistry. 26
Autor:
Laura E. Ratcliff, Takayoshi Oshima, Felix Nippert, Benjamin M. Janzen, Elias Kluth, Rüdiger Goldhahn, Martin Feneberg, Piero Mazzolini, Oliver Bierwagen, Charlotte Wouters, Musbah Nofal, Martin Albrecht, Jack E. N. Swallow, Leanne A. H. Jones, Pardeep K. Thakur, Tien‐Lin Lee, Curran Kalha, Christoph Schlueter, Tim D. Veal, Joel B. Varley, Markus R. Wagner, Anna Regoutz
Publikováno v:
Advanced materials 34(37), 2204217 (2022). doi:10.1002/adma.202204217
Advanced materials 34(37), 2204217 (2022). doi:10.1002/adma.202204217
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a87a2bd887303dc342a2f7671d87550a
Autor:
Laura E, Ratcliff, Takayoshi, Oshima, Felix, Nippert, Benjamin M, Janzen, Elias, Kluth, Rüdiger, Goldhahn, Martin, Feneberg, Piero, Mazzolini, Oliver, Bierwagen, Charlotte, Wouters, Musbah, Nofal, Martin, Albrecht, Jack E N, Swallow, Leanne A H, Jones, Pardeep K, Thakur, Tien-Lin, Lee, Curran, Kalha, Christoph, Schlueter, Tim D, Veal, Joel B, Varley, Markus R, Wagner, Anna, Regoutz
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 34(37)
Ga
Autor:
Elias Kluth, A F M Anhar Uddin Bhuiyan, Lingyu Meng, Jürgen Bläsing, Hongping Zhao, André Strittmatter, Rüdiger Goldhahn, Martin Feneberg
Publikováno v:
Japanese Journal of Applied Physics. 62:051001
The anisotropic dielectric functions (DF) of corundum structured m-plane α-(Al x Ga1−x )2O3 thin films (up to x = 0.76) grown on m-plane sapphire substrate by metalorganic CVD have been investigated. IR and visible–UV spectroscopic ellipsometry
Autor:
Volker Lorenz, Phil Liebing, Matthias Müller, Liane Hilfert, Martin Feneberg, Elias Kluth, Marcel Kühling, Magnus R. Buchner, Rüdiger Goldhahn, Frank T. Edelmann
Publikováno v:
Dalton transactions (Cambridge, England : 2003). 51(20)
A series of brightly colored (“pantochromic”) alkaline earth metal 1,3-dimethylviolurates AE(Me2Vio)2 have been prepared and fully characterized.
Autor:
Alexandra Papadogianni, Charlotte Wouters, Robert Schewski, Johannes Feldl, Jonas Lähnemann, Takahiro Nagata, Elias Kluth, Martin Feneberg, Rüdiger Goldhahn, Manfred Ramsteiner, Martin Albrecht, Oliver Bierwagen
Publikováno v:
Physical Review Materials. 6
Autor:
Elias Kluth, Michael Fay, Christopher Parmenter, Joseph Roberts, Emily Smith, Craig Stoppiello, Fabien Massabuau, Rüdiger Goldhahn, Martin Feneberg
Publikováno v:
Applied Physics Letters. 122:092101
Redshift of the absorption onset and amplitude increase in the ultraviolet complex dielectric function (DF) of corundum-like [Formula: see text]-(Ti xGa1− x)2O3 with increasing Ti content is presented. [Formula: see text]-Ga2O3 thin film samples al
Autor:
Oliver Bierwagen, Georg Hoffmann, Jona Grümbel, Rüdiger Goldhahn, Kingsley Egbo, Esperanza Luna, Elias Kluth, Jonas Lähnemann, Achim Trampert, Martin Feneberg
Publikováno v:
Journal of Applied Physics. 133:045701
By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These films grow epit
Publikováno v:
Applied Physics Letters. 121:062106
The optical properties of a single-phase corundum-structured In2O3 epilayer grown by a mist chemical vapor deposition method have been studied. Raman scattering measurements on a c face and on a lateral face reveal all of the seven Raman-active modes
Autor:
Rüdiger Goldhahn, Elias Kluth, Karsten Lange, M. Wieneke, Armin Dadgar, Jürgen Bläsing, Martin Feneberg, Hartmut Witte
Publikováno v:
Semiconductor Science and Technology. 35:095033
Doping induced changes in lattice parameters are investigated experimentally for the shallow donors silicon and germanium in thin-film wurtzite a-plane GaN. Silicon doping results in a lattice contraction while germanium doping results in a small but