Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Elia Ambrosi"'
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
Autor:
Wei Wang, Ming Wang, Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Zhong Sun, Xiaodong Chen, Daniele Ielmini
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-9 (2019)
Resistive random-access memory is operated based on the formation and disruption of nanoscale conductive filaments, but a mechanistic understanding of this process remains unclear. Here, Wang et al. develop a surface-diffusion model to describe lifet
Externí odkaz:
https://doaj.org/article/bb61f6f7fd6e454bbaaca9088c9120c8
Publikováno v:
Advanced Intelligent Systems, Vol 2, Iss 8, Pp n/a-n/a (2020)
In‐memory computing with cross‐point resistive memory arrays has gained enormous attention to accelerate the matrix‐vector multiplication in the computation of data‐centric applications. By combining a cross‐point array and feedback amplifi
Externí odkaz:
https://doaj.org/article/471c53f6c1a84467a6810e0655cdf984
Autor:
Elia Ambrosi, Cheng-Hsien Wu, Heng-Yuan Lee, Chien-Min Lee, Chen-Feng Hsu, Cheng-Chun Chang, Tung-Ying Lee, Xin-Yu Bao
Publikováno v:
IEEE Electron Device Letters. 43:1673-1676
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d627ac276124b8e88582ad6aef83d151
https://doi.org/10.1109/led.2022.3203146
https://doi.org/10.1109/led.2022.3203146
Publikováno v:
IEEE Transactions on Electron Devices. 68:4335-4341
Volatile resistive switching random access memory (RRAM) devices are drawing attention in both storage and computing applications due to their high ON-/ OFF-ratio, fast switching speed, low leakage, and scalability. However, these devices are relativ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68302d03ae6728752a64e824e7141e53
https://doi.org/10.1109/ted.2021.3076029
https://doi.org/10.1109/ted.2021.3076029
Autor:
Matteo Farronato, Elia Ambrosi, Daniele Ielmini, Caterina Sbandati, Alessandro Milozzi, Yu-Hsuan Lin, Wei Wang, Erika Covi
Publikováno v:
IEEE Transactions on Electron Devices. 68:4342-4349
Understanding the switching mechanism of the volatile resistive switching random access memory (RRAM) device is important to harness its characteristics and further enhance its performance. Accurate modeling of its dynamic behavior is also of deep va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ef8fd3bc59299cf37ace3a499b701ab
https://doi.org/10.1109/ted.2021.3095033
https://doi.org/10.1109/ted.2021.3095033
Publikováno v:
IRPS
This work addresses the reliability of RRAM, with a focus on conductance variation and its impact on in-memory computing (IMC). The core advantage of IMC is the ability to execute matrix-vector multiplication (MVM) in one step in crosspoint memory ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::732b65d84df7f070590d1e92a6fb0dc8
http://hdl.handle.net/11311/1173656
http://hdl.handle.net/11311/1173656
Publikováno v:
AICAS
Thanks to the high parallelism endowed by physical rules, in-memory computing with crosspoint resistive memory arrays has been applied to accelerate typical dataintensive tasks such as the training and inference of deep learning. Recently, it has bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f539e5a520c243ed7df7c000b1a0dbea
https://doi.org/10.1109/aicas48895.2020.9073964
https://doi.org/10.1109/aicas48895.2020.9073964
Autor:
Giacomo Pedretti, Elia Ambrosi, Daniele Ielmini, Piergiulio Mannocci, Zhong Sun, Alessandro Bricalli
Publikováno v:
IEEE Transactions on Electron Devices
In-memory computing with crosspoint resistive memory arrays has been shown to accelerate data-centric computations such as the training and inference of deep neural networks, thanks to the high parallelism endowed by physical rules in the electrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93d99617435579ae79d1bd34dd6c812c
http://hdl.handle.net/11311/1140183
http://hdl.handle.net/11311/1140183
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
The understanding of the dynamic mechanism of volatile resistive switching memory devices is of paramount importance to further increase the switching speed. It is also of great value for future neuromorphic applications which use such devices in tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ea18a7cbed1245a857bbd3588e459d0
https://doi.org/10.1109/iedm19573.2019.8993625
https://doi.org/10.1109/iedm19573.2019.8993625
Autor:
Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Daniele Ielmini, Rosana Rodriguez, M. Maestro
Publikováno v:
IEEE Transactions on Electron Devices
The cross-point architecture for memory arrays is widely considered as one of the most attractive solutions for storage and memory circuits thanks to simplicity, scalability, small cell size, and consequently high density and low cost. Cost-scalable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f4a47d05d07eec39a68205813509978
https://doi.org/10.1109/ted.2017.2777986
https://doi.org/10.1109/ted.2017.2777986