Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Eli Lusky"'
MirrorBit ® technology (also known as NROM) is a unique localized charge-trapping based non-volatile memory device that employs two separate physical and narrow charge packets per transistor, enabling two bits per cell. This technology requires a st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::197682eb0d41bdf41c932b231cf68946
https://doi.org/10.1016/b978-0-12-803581-8.01768-9
https://doi.org/10.1016/b978-0-12-803581-8.01768-9
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 4:404-415
Post cycling data retention reliability model of NROM devices is presented. The degradation rate of the threshold voltage of cycled cells is shown to be a multiplication of three functions: 1) bit density; 2) endurance; and 3) storage time and temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4b9859bc0e48b21890447bcb7a7f48a
https://doi.org/10.1109/tdmr.2004.834098
https://doi.org/10.1109/tdmr.2004.834098
Publikováno v:
Solid-State Electronics. 48:1489-1495
This paper discusses the spatial characterization and redistribution of hot carriers injected into the gate dielectric stack of the NROM localized charge trapping non-volatile memory device. The spatial characterization is based on a novel experiment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ba5aa28a6acf29241b984dda4933b04
https://doi.org/10.1016/j.sse.2004.03.013
https://doi.org/10.1016/j.sse.2004.03.013
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 4:397-403
Saifun NROM/spl trade/ is a novel localized charge-trapping-based nonvolatile memory technology that employs inherent two-bits-per-cell operation. NROM technology is able to provide code flash, data flash, embedded flash, and true EEPROM functionalit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dec94483c798597731d11145cc8d308d
https://doi.org/10.1109/tdmr.2004.836717
https://doi.org/10.1109/tdmr.2004.836717
Publikováno v:
Microelectronic Engineering. 72:426-433
NROM is a two bits per cell, localized charge trapping non-volatile memory device. A unique erase state threshold voltage drift in the NROM cell is presented. The research aimed to determine the origin of this phenomenon and assess the role of latera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b3cda628ed422181a599d2f9806eb75
https://doi.org/10.1016/j.mee.2004.01.025
https://doi.org/10.1016/j.mee.2004.01.025
Publikováno v:
IEEE Transactions on Electron Devices. 51:444-451
A novel measurement method to extract the spatial distribution of channel hot electron injection is described. The method is based on characterization of localized trapped-charge in the nitride read-only memory (NROM) device. The charge distribution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a11d7398b90d992d1cfbc89d3c48f55b
https://doi.org/10.1109/ted.2003.823245
https://doi.org/10.1109/ted.2003.823245
Subthreshold slope degradation model for localized-charge-trapping based non-volatile memory devices
Publikováno v:
Solid-State Electronics. 47:937-941
An analytical model is presented for the subthreshold slope degradation of localized-charge-trapping based non-volatile memory devices. The model incorporates fringing field effects and asserts that the subthreshold slope degradation is a distinct ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0e4cde3d45a2509b70f3050c1aec86e
https://doi.org/10.1016/s0038-1101(02)00454-9
https://doi.org/10.1016/s0038-1101(02)00454-9
Publikováno v:
IEEE Transactions on Electron Devices. 49:1939-1946
The aim of this paper is to achieve a correct description of the programming charge distribution in NROM memory devices. This is essential to prove device functionality and to extrapolate scaling limits of devices. For this purpose we employ an inver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c3deae68c05c6b4f3eccc96507448c5
https://doi.org/10.1109/ted.2002.804726
https://doi.org/10.1109/ted.2002.804726
Publikováno v:
Applied Physics Letters. 85:669-671
A spectroscopy method is proposed and implemented for Si3Ni4 layer using the NROM® cell and the gate-induced-drain-leakage measurement. The proposed method allows probing of both electron and hole traps in the entire band gap with almost no fitting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4dc023d3feded9db80db0254b6e8cdd
https://doi.org/10.1063/1.1774272
https://doi.org/10.1063/1.1774272
Publikováno v:
IEEE Electron Device Letters. 23:556-558
An electrons retention model for localized charge, trapped in ONO stacked dielectric, is introduced utilizing the nitride read-only memory (NROM) device. The observed reduction in threshold voltage (retention loss) of a programmed cell is explained i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ad8b5dd3d81cf516e1a8b5c57b7331b
https://doi.org/10.1109/led.2002.802599
https://doi.org/10.1109/led.2002.802599