Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Elham Cheshmikhani"'
Publikováno v:
IEEE Access, Vol 11, Pp 33768-33791 (2023)
During the last few years, hardware accelerators have been gaining popularity thanks to their ability to achieve higher performance and efficiency than classic general-purpose solutions. They are fundamentally shaping the current generations of Syste
Externí odkaz:
https://doaj.org/article/cba06382dc3e4b1aa19b3bf616b7230d
Publikováno v:
IEEE Access, Vol 10, Pp 120702-120713 (2022)
Thanks to the promised improvements in performance and energy efficiency, hardware accelerators are taking momentum in many computing contexts, both in terms of variety and relative weight in the silicon area of many chips. Commonly, the way an appli
Externí odkaz:
https://doaj.org/article/377ee967019445abb0a2b4a3d99d0e80
Performance and reliability are two prominent factors in the design of data storage systems. To achieve higher performance, recently storage system designers use DRAM-based buffers. The volatility of DRAM brings up the possibility of data loss, so a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2856342047a7b212b805128cd2ebcccd
http://arxiv.org/abs/2202.13409
http://arxiv.org/abs/2202.13409
As technology process node scales down, on-chip SRAM caches lose their efficiency because of their low scalability, high leakage power, and increasing rate of soft errors. Among emerging memory technologies, $Spin$ - $Transfer\; Torque\; Magnetic\; R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1bbfad7194023c2605ac80f3a36e2ee6
http://arxiv.org/abs/2201.04373
http://arxiv.org/abs/2201.04373
Spin-transfer torque magnetic RAM (STT-MRAM) is known as the most promising replacement for static random access memory (SRAM) technology in large last-level cache memories (LLC). Despite its high density, nonvolatility, near-zero leakage power, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21a854f2cdc3e7084f5d6dbbffe5d8da
http://arxiv.org/abs/2201.02855
http://arxiv.org/abs/2201.02855
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 66:1237-1241
Recent developments in non-volatile memories (NVMs) have introduced them as an alternative for SRAMs in on-chip caches. Besides the promising features of NVMs, e.g., near-zero leakage power, immunity to radiation-induced particle strike, and higher d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da2ab463eb8004d550b2b0c18cccfe2a
https://doi.org/10.1109/tcsii.2018.2881175
https://doi.org/10.1109/tcsii.2018.2881175
Publikováno v:
DATE
Hybrid Multi-Level Cache Architectures (HCAs) are promising solutions for the growing need of high-performance and cost-efficient data storage systems. HCAs employ a high endurable memory as the first-level cache and a Solid-State Drive (SSD) as the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c5e2868ed2b623d8bf7a1750df03522
https://doi.org/10.23919/date48585.2020.9116550
https://doi.org/10.23919/date48585.2020.9116550
Publikováno v:
DATE
Spin-Transfer Torque Magnetic RAM (STT-MRAM) as one of the most promising replacements for SRAMs in on-chip cache memories benefits from higher density and scalability, near-zero leakage power, and non-volatility, but its reliability is threatened by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96279d47fe69a8308868f793ca22f66b
https://doi.org/10.23919/date.2019.8714946
https://doi.org/10.23919/date.2019.8714946
Publikováno v:
ASP-DAC
Spin-Transfer Torque Magnetic RAM (STT-MRAM) is a promising alternative for SRAMs in on-chip cache memories. Besides all its advantages, high error rate in STT-MRAM is a major limiting factor for on-chip cache memories. In this paper, we first presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::535883469d6e5b8791ecdb492495587c
https://doi.org/10.1145/3287624.3287686
https://doi.org/10.1145/3287624.3287686
Publikováno v:
IEEE Transactions on Computers. :1-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3b59d0c857bdb7c058430d5d2766cd8
https://doi.org/10.1109/tc.2021.3082004
https://doi.org/10.1109/tc.2021.3082004