Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Elgin Quek"'
Autor:
Zheng Li, Jin Xue, Marc de Cea, Jaehwan Kim, Hao Nong, Daniel Chong, Khee Yong Lim, Elgin Quek, Rajeev J. Ram
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-9 (2023)
Integrated photonic systems require nanoscale on-chip light sources. Here Li et al., fabricate a silicon chip with LEDs smaller than the wavelength of light. This characteristic implies a partially coherent light emission, which allows the realizatio
Externí odkaz:
https://doaj.org/article/fe6a4e89822a430a92cf664e78e0bbe5
Autor:
Jiuxuan Zhao, Tommaso Milanese, Francesco Gramuglia, Pouyan Keshavarzian, Shyue Seng Tan, Michelle Tng, Louis Lim, Vinit Dhulla, Elgin Quek, Myung-Jae Lee, Edoardo Charbon
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-10
We present an analog silicon photomultiplier (SiPM) based on a standard 55 nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16$\times$16 single-photon avalanche diodes (SPADs) and measures 0.29$\times$0.32 mm$^2$. Each SPAD cell is pass
Autor:
Eng Huat Toh, Tam Lyn Tan, Jian-Yi Wong, Patrick Cao, Praveen Arikath, Mohd Nurul Islam, Ping Zheng, Yongshun Sun, Mathew Shajan, Elgin Quek, R.K. Jain
Publikováno v:
IEEE Sensors Journal. 22:11256-11263
This paper presents three dimensional (3-D) Hall sensors that are capable of detecting magnetic fields in three axis directions and are realized on 180BCDLite® technology with one or two mask adders. The 3-D Hall sensor architecture adopts a modular
Autor:
Michelle Tng, Elgin Quek, Pouyan Keshavarzian, Francesco Gramuglia, Shyue Seng Tan, Ekin Kizilkan, Edoardo Charbon, Claudio Bruschini, Myung-Jae Lee
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-10
CMOS single-photon avalanche diodes (SPADs) have broken into the mainstream by enabling the adoption of imaging, timing, and security technologies in a variety of applications within the consumer, medical and industrial domains. The continued scaling
Autor:
Zheng Li, Jin Xue, Marc de Cea, Jaehwan Kim, Hao Nong, Daniel Chong, Khee Yong Lim, Elgin Quek, Rajeev J. Ram
A nanoscale on-chip light source with high intensity is desired for various applications in integrated photonics systems. However, it is challenging to realize such an emitter using materials and fabrication processes compatible with the standard int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8263ec409b58cdc3dced0da4deb764bc
https://doi.org/10.21203/rs.3.rs-2020076/v1
https://doi.org/10.21203/rs.3.rs-2020076/v1
Autor:
Pouyan Keshavarzian, Francesco Gramuglia, Ekin Kizilkan, Claudio Bruschini, Shyue Seng Tan, Michelle Tng, Daniel Chong, Elgin Quek, Myung-Jae Lee, Edoardo Charbon
Publikováno v:
Advanced Photon Counting Techniques XVI.
Autor:
Won-Yong Ha, Eunsung Park, Doyoon Eom, Hyo-Sung Park, Daniel Chong, Shyue Seng Tan, Michelle Tng, Elgin Quek, Claudio Bruschini, Edoardo Charbon, Woo-Young Choi, Myung-Jae Lee
Publikováno v:
Optics Express. 31:13798
This paper presents a single-photon avalanche diode (SPAD) in 55 nm bipolar-CMOS-DMOS (BCD) technology. In order to realize a SPAD having sub-20 V breakdown voltage for mobile applications while preventing high tunneling noise, a high-voltage N-well
Autor:
James Zi Jing Tan, Daniel Burt, Youngmin Kim, Hyo-Jun Joo, Melvina Chen, Xuncheng Shi, Lin Zhang, Chuan Seng Tan, Khee Yong Lim, Elgin Quek, Yi-Chiau Huang, Simone Assali, Oussama Moutanabbir, Donguk Nam
Publikováno v:
ECS Meeting Abstracts. :1177-1177
With the numerous recent demonstrations of germanium-tin (GeSn) semiconductor lasers, this material has become the strongest candidate for the realization of photonic-integrated circuits (PICs). However, the high defect density of this material often
Autor:
Jian-Yi Wong, Praveen Arikath, Mathew Shajan, Eng Huat Toh, Ping Zheng, Yongshun Sun, Tam Lyn Tan, Patrick Cao, Elgin Quek, R.K. Jain, Mohd Nurul Islam
Publikováno v:
2020 IEEE SENSORS.
Modular three dimensional (3-D) Hall sensors are demonstrated in 180BCDLite® technology. It is CMOS integrated with one or two mask adders. Best-in-class current– related sensitivity S I >385 V/A*T and voltage–related sensitivity S V >50 mV/V*T
Autor:
Yongshun Sun, Eng Huat Toh, Patrick Cao, Bin Liu, Gong Cheng, Shiang Yang Ong, Yinjie Ding, Mohd Nurul Islam, Elgin Quek, Michael Tiong, R.K. Jain, Aaron Liu, Tam Lyn Tan
Publikováno v:
2017 IEEE SENSORS.
Low-cost, low-power, and high-sensitivity System-on-Chip (SoC) Hall Effect sensors for 0.18μm and 0.13μm technologies and beyond are developed in this work. A best-inclass current-related sensitivity Si of 418 V/A∗T is achieved by a Hall device w