Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Elghazzali, A."'
Autor:
Friedrich-Leonhard Schein, Christian Voigt, Lutz Gerhold, Ioannis Tsigaras, Mohamed Elghazzali, Hirofumi Sawamoto, Ewald Strolz, Roland Rettenmeier, Ruben Kahle, Lars Bottcher
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Autor:
Lars Bottcher, Hirofumi Sawamoto, Ioannis Tsigaras, Roland Rettenmeier, Ewald Strolz, Friedrich-Leonhard Schein, Christian Voigt, Mohammed Elghazzali
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
Within the advanced packaging technologies there is an increasing demand for very high I/O count solutions to fulfill requirements of high performance computing applications like big data analysis. Thus, the density of lateral and vertical interconne
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
In UBM/RDL manufacturing, the process challenge to keep low contact resistance in high-density interconnects increases with the ongoing scaling towards miniaturization of the critical design dimensions. Moreover, the ubiquitous use of organic passiva
Autor:
Boukhlifi, Y., Hamdoune, L., Harchaoui, A., Sobhi, A., Elghazzali, A., Elbahri, A., Louardi, N., Ameur, A., Alami, M.
Publikováno v:
Proges en Urologie; 2023 Supplement, Vol. 33 Issue 3, pS103-S104, 2p
Publikováno v:
2017 China Semiconductor Technology International Conference (CSTIC).
Advanced Packaging relies heavily on the use of organic/polymer films and mold wafers such as Fan-Out Wafer-Level-Packages (FOWLP). Processing of such wafers poses challenges, potentially resulting in a high contact resistance (Rc), yield loss, incre
Publikováno v:
2016 China Semiconductor Technology International Conference (CSTIC).
Organic passivated silicon wafers, composite substrates such as silicon on glass or Fan-out Wafer-Level Package (FOWLP) technology all pose new challenges for UBM and RDL processes [1]-[5]. Materials used in these substrates must be adequately degass
Autor:
Mohamed Elghazzali, Jürgen Weichart
Publikováno v:
International Symposium on Microelectronics. 2010:000185-000191
The barrier and seed layers for electroplating of copper play a critical role in the realization of through silicon vias (TSV) in 3D IC packaging. Physical vapour deposition (PVD) is still the preferred method for depositing these films, but must mee
Publikováno v:
2016 China Semiconductor Technology International Conference (CSTIC); 2016, p1-4, 4p