Výsledky vyhledávání - "Elfving, Anders"

Dissertation/ Thesis

Near-infrared photodetectors based on Si/SiGe nanostructures

Autor: Elfving, Anders

Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implement

Externí odkaz: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-5909

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Conference

ESA’S SPACEBORNE LIDAR MISSION ADM-AEOLUS; PROJECT STATUS AND PREPARATIONS FOR LAUNCH.

Autor: Straume, Anne Grete¹ anne.straume@esa.int, Elfving, Anders¹, Wernham, Denny¹, de Bruin, Frank¹, Kanitz, Thomas¹, Schuettemeyer, Dirk¹, von Bismarck, Jonas², Buscaglione, Fabio², Lecrenier, O.³, McGoldrick, Phil⁴

Publikováno v: EPJ Web of Conferences. 2018, Vol. 176 Issue 1, p1-4. 4p. 2 Color Photographs, 1 Diagram.

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Akademický článek

ESA’s Spaceborne Lidar Mission ADM-Aeolus; Recent Achievements and Preparations for Launch

Autor: Straume Anne Grete, Elfving Anders, Wernham Denny, Culoma Alain, Mondin Linda, de Bruin Frank, Kanitz Thomas, Schuettemeyer Dirk, Buscaglione Fabio, Dehn Angelika

Publikováno v: EPJ Web of Conferences, Vol 119, p 01001 (2016)

Within ESA’s Living Planet Programme, the Atmospheric Dynamics Mission (ADM-Aeolus) was chosen as the second Earth Explorer Core mission in 1999. It shall demonstrate the potential of high spectral resolution Doppler Wind lidars for operational mea

Externí odkaz: https://doaj.org/article/da7119b59f8e4e26a344341e04ac1594

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Akademický článek

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Growth-temperature-dependent band alignment in Si/Ge quantum dots from photoluminescence spectroscopy

Autor: Larsson, Mats, Elfving, Anders, Ni, Wei-Xin, Hansson, Göran V., Holtz, Per-Olof

The present work is a photoluminescence study of Si-embedded Stranski-Krastanov Ge quantum dots. The value of the conduction band offset is a result of the magnitude of the tensile strain in the Si surrounding the compressive strained Ge dot. Due to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::1cf665d297cb560c5e37a44dcb138b62
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-13795

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Reversed quantum-confined Stark effect and an asymmetric band alignment observed for type-II Si∕Ge quantum dots

Autor: Larsson, Mats, Holtz, Per-Olof, Elfving, Anders, Hansson, Göran, Ni, Wei-Xin

We report on the quantum-confined Stark effect for spatially indirect transitions in Stranski-Krastanov grown type-II Si∕Ge quantum dots. A linear blueshift of the spatially indirect transition is observed at increasing electric field in contrast t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f0bc5b9fd93a4622edd79647d433b83e
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-16331

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Kniha

3D Integration of MEMS and IC: Design, Technology and Simulations.

Autor: Taklo, Maaike M. V., SchjøLberg-Henriksen, Kari, Lietaer, Nicolas, Prainsack, Josef, Elfving, Anders, Weber, Josef, Klein, Matthias, Schneider, Peter, Reitz, Sven

Publikováno v: Advanced Materials & Technologies for Micro/Nano-Devices, Sensors & Actuators; 2010, p191-203, 13p

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Conference

Efficient Near Infrared Si/Ge Quantum Dot Photo-Detector Based on a Heterojunction Bipolar Transistor.

Autor: Elfving, Anders, Larsson, Mats, Holtz, Per-Olof, Hansson, Göran V., Ni, Wei-Xin

Publikováno v: MRS Online Proceedings Library; 2003, Vol. 770 Issue 1, p1-12, 12p

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Akademický článek

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