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pro vyhledávání: '"Eleonora Canato"'
Autor:
Manuel Fregolent, Mirco Boito, Michele Disaro, Carlo De Santi, Matteo Buffolo, Eleonora Canato, Michele Gallo, Cristina Miccoli, Isabella Rossetto, Giansalvo Pizzo, Alfio Russo, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 703-709 (2024)
For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative activation energy of gate reliability in power GaN HEMTs with p-GaN Schottky gate. First, the o
Externí odkaz:
https://doaj.org/article/15a4697f89804f29a689c0c64e591d90