Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Elena Flitsiyan"'
Publikováno v:
Radiation Effects and Defects in Solids. :1-19
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adf26da3139f27ef220b3446726aa65d
https://doi.org/10.1080/10420150.2023.2175677
https://doi.org/10.1080/10420150.2023.2175677
Autor:
Valentina Zaffino, Stephen J. Pearton, Fan Ren, Jonathan Lee, Shihyun Ahn, Elena Flitsiyan, Michael Antia, Leonid Chernyak, Joseph Salzman, Anupama Yadav, Boris Meyler
Publikováno v:
Radiation Effects and Defects in Solids. 172:250-256
The impact of internal irradiation with secondary Compton electrons, generated by gamma-photons, on the characteristics of III-N/GaN-based devices was explored. N-channel AlGaN/GaN high-electron-mobility transistors (HEMTs) were exposed to gamma-radi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::077f48dd852703f752bef05c9cfb37fe
https://doi.org/10.1080/10420150.2017.1300903
https://doi.org/10.1080/10420150.2017.1300903
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:S3063-S3066
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fb8c614fc243a7ca8afa04645ed356c
https://doi.org/10.1149/2.0191711jss
https://doi.org/10.1149/2.0191711jss
Autor:
Jasques Boivin, Sebestian Guay, Sergey Khodorov, Leonid Chernyak, Anupama Yadav, Boris Meyler, Cameron Glasscock, Elena Flitsiyan, Joseph Salzman, Carlo Coppola, Igor Lubomirsky
Publikováno v:
Radiation Effects and Defects in Solids. 171:223-230
The impact of 60Co gamma-irradiation on n-channel AlGaN/GaN high-electron-mobility transistors was studied by means of temperature-dependent electron beam-induced current (EBIC) and cathodoluminescence (CL) techniques. For the doses up to ∼250 Gy,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e3fc2ed4d55c294c3264e5ac9735014
https://doi.org/10.1080/10420150.2016.1170018
https://doi.org/10.1080/10420150.2016.1170018
Publikováno v:
ECS Journal of Solid State Science and Technology. 9:065007
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd300053e829c4381bb05d36f1ec6358
https://doi.org/10.1149/2162-8777/aba407
https://doi.org/10.1149/2162-8777/aba407
Autor:
Elena Flitsiyan, Yueh-Ling Hsieh, Lei Lei, Leonid Chernyak, Ya-Hsi Hwang, Anupama Yadav, Fan Ren, Igor Lubomirsky, Stephen J. Pearton
Publikováno v:
Radiation Effects and Defects in Solids. 170:377-385
To understand the effects of 60Co gamma-irradiation, systematic studies were carried out on n-channel AlGaN/GaN high electron mobility transistors. Electrical testing, combined with electron beam-induced current measurements, was able to provide crit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be2db2f8e5de4c1383735f27309071c1
https://doi.org/10.1080/10420150.2015.1010170
https://doi.org/10.1080/10420150.2015.1010170
Autor:
Li Liu, Igor Lubomirsky, Leonid Chernyak, Max Shatkhin, Casey M. Schwarz, Stephen J. Pearton, Anupama Yadav, Luther Wang, Fan Ren, Elena Flitsiyan, Ya-Shi Hwang
Publikováno v:
ECS Transactions. 61:171-177
AlGaN/GaN High Electron Mobility Transistors (HEMTs) are the most advanced electronic nitride devices to be used at high temperatures and in harshly radiated environments. A clear understanding of radiation effects on these devices is essential in or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3fddabb027bd57a3b008b1ac36b0f804
https://doi.org/10.1149/06104.0171ecst
https://doi.org/10.1149/06104.0171ecst
Autor:
Lei Lei, Casey M. Schwarz, Ivan I. Kravchenko, A. A. Allerman, Anupama Yadav, Fan Ren, Carlos Anthony Sanchez, Stephen J. Pearton, Luther Wang, Max Shatkhin, Elena Flitsiyan, Yueh-Ling Hsieh, Leonid Chernyak, Ya-Hsi Hwang, S.S. Li, Albert G. Baca
Publikováno v:
ECS Transactions. 61:205-210
AlGaN/GaN High Electron Mobility Transistors (HEMTs) show great promise for applications such as military radar and satellite-based communications systems. Due to the applications in extreme radiation environments, it is important to characterize the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5039752e0f4c47ab52d0329ea7c3f4bd
https://doi.org/10.1149/06104.0205ecst
https://doi.org/10.1149/06104.0205ecst
Autor:
William G. Vernetson, Zinovy Dashevsky, Leonid Chernyak, Robert E. Peale, Elena Flitsiyan, Casey M. Schwarz
Publikováno v:
Radiation Effects and Defects in Solids. 166:104-108
Irradiation of ZnO single crystals by thermal neutrons with a dose up to 7×1017 cm−2 and subsequent annealing at 400 °C for 1 h leads to a significant increase in majority carrier mobility and concentration in this material, with the correspondin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::915079dc7b4f777ecbab9da9ce1e383b
https://doi.org/10.1080/10420150.2010.507672
https://doi.org/10.1080/10420150.2010.507672
Autor:
Zinovy Dashevsky, Elena Flitsiyan, V. Kasiyan, Leonid Chernyak, Max Shatkhin, E. Shufer, R. Kreizman
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 4:296-301
This work deals with the impact of nano-scale morphology on the photoelectric properties of n-type PbTe thin films. Nano-structured thin films were prepared by varying the rate of nucleation as a function of the nature and the temperature of the subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d59bc8d610cb39fd5a03d57aef07c01
https://doi.org/10.1166/jno.2009.1042
https://doi.org/10.1166/jno.2009.1042