Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Elena Capogreco"'
Publikováno v:
IEEE TRANSACTIONS ON ELECTRON DEVICES
The low-frequency (LF) noise characterization of Si0.7Ge0.3 pFinFETs and transistors’ performance were analyzed for different NH3 post deposition annealing (PDA) temperatures. The flicker noise of these pFinFETs is dominated by carrier number fluct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::822184d837c0c5ea0afb1308f24eb495
https://doi.org/10.1109/ted.2022.3212324
https://doi.org/10.1109/ted.2022.3212324
Autor:
Anshul Gupta, Zheng Tao, Dunja Radisic, Hans Mertens, Olalla Varela Pedreira, Steven Demuynck, Juergen Boemmels, Katia Devriendt, Nancy Heylen, Shouhua Wang, Karine Kenis, Lieve Teugels, Farid Sebaai, Christophe Lorant, Nicolas Jourdan, Boon Teik Chan, Sujith Subramanian, Filip Schleicher, Antony Peter, Nouredine Rassoul, Yong Kong Siew, Basoene Briggs, Dasiy Zhou, Erik Rosseel, Elena Capogreco, Geert Mannaert, Alfonso Sepúlveda Márquez, Emmanuel Dupuy, Kevin Vandersmissen, Bilal Chehab, Gayle Murdoch, Efrain Altamirano-Sánchez, Serge Biesemans, Zsolt Tokei, Eugenio Dentoni Litta, Naoto Horiguchi
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4e39fa928e22ebd2961927d5db215ec
https://doi.org/10.1117/12.2615641
https://doi.org/10.1117/12.2615641
Autor:
Alessio Spessot, Shairfe Muhammad Salahuddin, Ricardo Escobar, Romain Ritzenthaler, Yang Xiang, Rahul Budhwani, Eugenio Dentoni Litta, Elena Capogreco, Joao Bastos, Yangyin Chen, Horiguchi Naoto
Publikováno v:
2022 IEEE International Memory Workshop (IMW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18b958acebeb56f79fba51fc84b61331
https://doi.org/10.1109/imw52921.2022.9779308
https://doi.org/10.1109/imw52921.2022.9779308
Autor:
Anshul Gupta, Yosuke Kimura, Thierry Conard, Dmitry Batuk, Briggs Basoene, Johan Meersschaut, Sylvain Baudot, Jef Geypen, Ebisudani Taishi, Gerardo Martinez, Timothee Blanquart, Praveen Dara, A. Peter, Steven Demuynck, Pierre Morin, Anabela Veloso, Elena Capogreco, Takayama Tomomi, Hans Mertens, Shiba Eiichiro, A. Sepúlveda, Sujith Subramanian
In this study, we explored the key properties and functionalities of plasma enhanced atomic layer deposition (PEALD) SiNx films, synthesized using different deposition temperatures (500–550 °C) and plasma conditions (lower and higher), both on 300
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::edd3fbab8933bc829a4ac31ead07a410
https://lirias.kuleuven.be/handle/123456789/676076
https://lirias.kuleuven.be/handle/123456789/676076
Autor:
Anurag Vohra, Clement Porret, Erik Rosseel, Andriy Yakovitch Hikavyy, Elena Capogreco, Naoto Horiguchi, Roger Loo, Wilfried Vandervorst
Publikováno v:
ECS Transactions. 93:29-33
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41aad0af62a4647ce41be9d264c4908c
https://doi.org/10.1149/09301.0029ecst
https://doi.org/10.1149/09301.0029ecst
Autor:
Alessio Spessot, Romain Ritzenthaler, EugenioDentoni Litta, Emmanuel Dupuy, Barry O’Sullivan, Joao Bastos, Elena Capogreco, Kenichi Miyaguchi, Vladimir Machkaoutsan, Younggwang Yoon, Pierre Fazan, Horiguchi Naoto
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84264c09a345ee509f9a5dc3e07c2071
https://doi.org/10.7567/ssdm.2020.b-10-03
https://doi.org/10.7567/ssdm.2020.b-10-03
Autor:
A. Vais, Hao Yu, A. Alian, Elena Capogreco, B. De Jaeger, Toby Hopf, K. Devriendt, Kurt Wostyn, Nadine Collaert, Liesbeth Witters, Alexey Milenin, Lieve Teugels, Farid Sebaai, Uthayasankaran Peralagu, Geert Mannaert, Karine Kenis, D. van Dorp, A. Peter, Niamh Waldron, Naoto Horiguchi, A. Walke
Publikováno v:
Advanced Etch Technology for Nanopatterning VIII.
With increasing challenges in reducing power density while keeping and even increasing the device performance at every new technology node, innovations in both the device architecture and materials will be needed to ensure continuous improvements in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30fadcaed4dbacb90a8e8967d8c3fd58
https://doi.org/10.1117/12.2511746
https://doi.org/10.1117/12.2511746
Autor:
Pierre C. Fazan, Younggwang Yoon, Barry O'Sullivan, Alessio Spessot, Elena Capogreco, Kenichi Miyaguchi, Naoto Horiguchi, V. Machkaoutsan, Joao Bastos, Eugenio Dentoni Litta, Emmanuel Dupuy, Romain Ritzenthaler
Publikováno v:
Japanese Journal of Applied Physics. 60:SBBB06
Automotive, Artificial Intelligence/Machine Learning and blockchain generation are imposing increasing demanding specs for Dynamic Random Access Memory (DRAM) memories. Wider memory bandwidth can be achieved by using conventional planar SiO2 MOSFET a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fac05a114f98cbc676fe8e61add671cd
https://doi.org/10.35848/1347-4065/abebbf
https://doi.org/10.35848/1347-4065/abebbf
Autor:
Anurag Vohra, Clement Porret, David Kohen, Steven Folkersma, Janusz Bogdanowicz, Marc Schaekers, John Tolle, Andriy Hikavyy, Elena Capogreco, Liesbeth Witters, Robert Langer, Wilfried Vandervorst, Roger Loo
Publikováno v:
Japanese Journal of Applied Physics; Apr2019, Vol. 58 Issue SB, p1-1, 1p