Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Elena A. Rakova"'
Autor:
Elena G. Rakova, Aleksandra A. Musatkina, Dmitry A. Lipinsky, Roman A. Romashov, Svetlana N. Revina
Publikováno v:
Laplage em Revista, Vol 7, Iss 3D (2021)
The purpose of the research is to identify the patterns of development of educational systems of Russia and the West with emphasis on the features of the introduction of the Bologna process into the Russian higher education system. In the process of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c235d4a170f3e9293dceffa7dbc2bb78
https://laplageemrevista.editorialaar.com/index.php/lpg1/article/view/1688
https://laplageemrevista.editorialaar.com/index.php/lpg1/article/view/1688
Autor:
Elena A. Rakova, Sergey V. Timofeev, V. L. Shirokii, Vikentii I. Bragin, Zoya A. Starikova, Igor B. Sivaev, Vladimir I. Potkin, D. A. Rudakov, N. A. Maier, Vladimir I. Bregadze, Ivan A. Godovikov, Ivan V. Glukhov
Publikováno v:
Journal of Organometallic Chemistry. 692:5133-5140
Halogenation of 9-dimethylsulfonium-7,8-dicarba-nido-undecaborane [9-SMe2-7,8-C2B9H11] with N-chlorosuccinimide, bromine and iodine gave the expected corresponding halogen derivatives [9-SMe2-11-X-7,8-C2B9H10], where X = Cl (1), Br (2), I (3). In the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::633e99dea4a4eeb1840eddb9e7f690ef
https://doi.org/10.1016/j.jorganchem.2007.07.036
https://doi.org/10.1016/j.jorganchem.2007.07.036
Publikováno v:
Journal of Crystal Growth. 167:458-467
Halide vapor phase epitaxy (HVPE) was performed for the growth of GaN films. The hexagonal phase α-GaN films were grown on (0001) and (112¯0) sapphire substrates, using the Ga/HCl/NH 3 /He system. Reflection high energy electron diffraction (RHEED)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cf3bfa733693d2a01582fc799a69a2d
https://doi.org/10.1016/0022-0248(96)00292-8
https://doi.org/10.1016/0022-0248(96)00292-8