Zobrazeno 1 - 10
of 2 430
pro vyhledávání: '"Elemental semiconductors"'
Publikováno v:
IET Circuits, Devices and Systems, Vol 16, Iss 6, Pp 491-499 (2022)
Abstract This paper presents a new structure consisting of a silicon PIN junction with high breakdown voltage and low dark current with two Guard rings. To achieve the optimal structure, the effect of the parameters on the breakdown voltage and the d
Externí odkaz:
https://doaj.org/article/8da8206da07a4d14b3d5d8b222377280
Publikováno v:
IET Renewable Power Generation, Vol 15, Iss 15, Pp 3661-3687 (2021)
Abstract This paper presents a new hybrid successive discretisation algorithm, used to calculate the parameters of the photovoltaic cells and panels, by the one diode model and the two diode model. Nine known datasets from the specialised literature
Externí odkaz:
https://doaj.org/article/8a79ae614c674ea3ac5bad188d750cde
Autor:
Mohammad Ali Shameli, Leila Yousefi
Publikováno v:
IET Optoelectronics, Vol 15, Iss 5, Pp 248-253 (2021)
Abstract In this article, a new structure for development of thin film solar cells is proposed in which elements with fractal shapes are integrated inside the cell to enhance its performance in a wide range of wavelengths. Two different structures ar
Externí odkaz:
https://doaj.org/article/8d85cc27ed4c46669820008e1b7648e1
Publikováno v:
IET Optoelectronics, Vol 15, Iss 3, Pp 139-148 (2021)
Abstract The quantum Toffoli gate is one of the essential reversible universal logic gates widely used for optical data processing. Herein, a new scheme of developing all‐optical Toffoli gate using a two‐dimensional silicon–air photonic crystal
Externí odkaz:
https://doaj.org/article/e3207cd797584b139797b73cd35d654f
Publikováno v:
IET Microwaves, Antennas & Propagation, Vol 15, Iss 6, Pp 661-673 (2021)
Abstract A reliable small‐signal modelling approach has been developed and applied on GaN‐on‐diamond high electron mobility transistor. The extrinsic elements' extraction procedure was improved to provide an accurate characterization for the qu
Externí odkaz:
https://doaj.org/article/e32e02d9ff1d4fb795225b5f1d148460
Autor:
Tobias Lamprecht, Felix Betschon, Johan Bauwelinck, Joris Van Kerrebrouck, Joris Lambrecht, Holger Gaul, Alexander Eichler, Xin Yin
Publikováno v:
IET Optoelectronics, Vol 15, Iss 2, Pp 92-101 (2021)
Abstract Chip‐on‐board silicon photonics O‐band wavelength‐division multiplexing transceivers have been developed that will eventually enable high‐throughput on‐board optical communication for multi‐socket on‐board communication. This
Externí odkaz:
https://doaj.org/article/82ae20652f494373b66a7e3ef55d84a6
Autor:
Francesco Zanetto, Vittorio Grimaldi, Fabio Toso, Emanuele Guglielmi, Maziyar Milanizadeh, Douglas Aguiar, Miltiadis Moralis‐Pegios, Stelios Pitris, Theoni Alexoudi, Francesco Morichetti, Andrea Melloni, Giorgio Ferrari, Marco Sampietro
Publikováno v:
IET Optoelectronics, Vol 15, Iss 2, Pp 111-120 (2021)
Abstract Real‐time control of multiple cascaded devices is a key requirement for the development of complex silicon photonic circuits performing new sophisticated optical functionalities. This article describes how the dithering technique can be le
Externí odkaz:
https://doaj.org/article/be0c3d1718824e7abdabceaedacfadeb
Autor:
F.S. Shoucair
Publikováno v:
IET Circuits, Devices and Systems, Vol 15, Iss 2, Pp 183-196 (2021)
Abstract An analysis of the metal oxide semiconductor field effect transistor (MOSFET) in strong inversion indicates two bias regions, in each of its triode and saturation conditions, whose distinct properties are elaborated and shown to lead to simp
Externí odkaz:
https://doaj.org/article/92d769331f2c455387491f1745caf124
Autor:
Oca, Gilbert Moises1, Putungan, Darwin Barayang2
Publikováno v:
Journal of Computational Methods in Sciences & Engineering. 2018, Vol. 18 Issue 3, p821-833. 13p.
Publikováno v:
Journal of Alloys & Compounds. Jan2018, Vol. 732, p218-221. 4p.