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pro vyhledávání: '"Electronic bandstructure"'
Understanding and controlling the photoexcited quasiparticle (QP) dynamics in monolayer transition metal dichalcogenides lays the foundation for exploring the strongly interacting, non-equilibrium 2D quasiparticle and polaritonic states in these quan
Externí odkaz:
http://arxiv.org/abs/2410.02047
Akademický článek
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Akademický článek
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Autor:
Mallik, Srijani, Göbel, Börge, Witt, Hugo, Vicente-Arche, Luis M., Varotto, Sara, Bréhin, Julien, Ménard, Gerbold, Saïz, Guilhem, Tamsaout, Dyhia, Santander-Syro, Andrés Felipe, Fortuna, Franck, Bertran, François, Fèvre, Patrick Le, Rault, Julien, Boventer, Isabella, Mertig, Ingrid, Barthélémy, Agnès, Bergeal, Nicolas, Johansson, Annika, Bibes, Manuel
Two-dimensional electron gases(2DEGs)based on KTaO3 are emerging as a promising platform for spin-orbitronics due to their high Rashba spin-orbit coupling (SOC) and gate-voltage tunability. The recent discovery of a superconducting state in KTaO3 2DE
Externí odkaz:
http://arxiv.org/abs/2311.08230
Publikováno v:
CS Appl. Electron. Mater. 2023, Publication Date: November 1, 2023
The large variety of complex electronic structure materials and their alloys, offer highly promising directions for improvements in thermoelectric (TE) power factors (PF). Their electronic structure contains rich features, referred to as 'surface com
Externí odkaz:
http://arxiv.org/abs/2311.03935
Publikováno v:
ACS Applied Electronic Materials; 5/28/2024, Vol. 6 Issue 5, p2889-2899, 11p
Autor:
Sharma, Neha Kapila, Sahoo, Sandhyarani, Sahu, Mousam Charan, Mallik, Sameer Kumar, Jena, Anjan Kumar, Sharma, Hitesh, Gupta, Sanjeev K., Ahuja, Rajeev, Sahoo, Satyaprakash
Publikováno v:
In Surfaces and Interfaces April 2022 29
Autor:
Collins, James L., Wang, Chutian, Tadich, Anton, Yin, Yuefeng, Zheng, Changxi, Hellerstedt, Jack, Grubišić-Čabo, Antonija, Tang, Shujie, Mo, Sung-Kwan, Riley, John, Huwald, Eric, Medhekar, Nikhil V., Fuhrer, Michael S., Edmonds, Mark T.
Layered indium selenides ($In_{2}Se_{3}$) have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the $\alpha$ and $\beta$' phases, respectively. In this work, we utilise angle-resolved photoelectron spectroscopy to
Externí odkaz:
http://arxiv.org/abs/1910.05969
Dilute nitride bismide GaNBiAs is a potential semiconductor alloy for near- and mid-infrared applications, particularly in 1.55 $\mu$m optical communication systems. Incorporating dilute amounts of Bismuth (Bi) into GaAs reduces the effective bandgap
Externí odkaz:
http://arxiv.org/abs/1706.07007
Autor:
Webb, James L., Hart, Lewis S., Wolverson, Daniel, Chen, Chaoyu, Avila, Jose, Asensio, Maria C.
Publikováno v:
Phys. Rev. B 96, 115205 (2017)
The rhenium-based transition metal dichalcogenides (TMDs) are atypical of the TMD family due to their highly anisotropic crystalline structure and are recognized as promising materials for two dimensional heterostructure devices. The nature of the ba
Externí odkaz:
http://arxiv.org/abs/1704.06042