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pro vyhledávání: '"Electron tunneling"'
Autor:
Lee, Jinhyoung1 (AUTHOR), Kim, Eungchul2 (AUTHOR), Cho, Jinill1 (AUTHOR), Seok, Hyunho3,4 (AUTHOR), Woo, Gunhoo3,4 (AUTHOR), Yu, Dayoung3,4 (AUTHOR), Jung, Gooeun5 (AUTHOR), Hwangbo, Hyeon5 (AUTHOR), Na, Jinyoung5 (AUTHOR), Im, Inseob5 (AUTHOR), Kim, Taesung1,3,4,6 (AUTHOR) tkim@skku.edu
Publikováno v:
Advanced Science. 2/2/2024, Vol. 11 Issue 5, p1-13. 13p.
Autor:
Yang, Yuxin1 (AUTHOR), Jiang, Tao1,2 (AUTHOR), Tian, Ye3 (AUTHOR), Zeng, Biaofeng1 (AUTHOR), Tang, Longhua1,2 (AUTHOR) lhtang@zju.edu.cn
Publikováno v:
Chinese Journal of Chemistry. Jan2024, Vol. 42 Issue 1, p67-72. 6p.
Akademický článek
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Autor:
Shafraniuk, Serhii
When the external electromagnetic field (EF) with the frequency $\omega $ acts on the discrete levels in the quantum dot (QD), it induces the mixed quantum state characterized by Rabi flops (RF). The RF process involves the oscillations in the level
Externí odkaz:
http://arxiv.org/abs/2403.19775
Publikováno v:
Phys. Rev. B 110, 064303 (2024)
We introduce a direct (Seebeck) and inverse (Peltier) thermoelectric effect induced by electron tunneling between closely separated conducting films. When a transverse temperature gradient is applied along one of two films, a bias voltage is induced
Externí odkaz:
http://arxiv.org/abs/2312.13017