Zobrazeno 1 - 10
of 3 332
pro vyhledávání: '"Electrical characterization"'
Publikováno v:
COMPEL -The international journal for computation and mathematics in electrical and electronic engineering, 2024, Vol. 43, Issue 5, pp. 1023-1034.
Autor:
Rhaycen R. Prates, Sylvain Barraud, Mikael Casse, Maud Vinet, Olivier Faynot, Marcelo A. Pavanello
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 682-691 (2024)
This work aims to perform a comprehensive comparison of the electrical properties of junctionless and inversion-mode nanowires MOSFETS, fabricated with similar gate stack and state-of-art process, in the temperature range from 300 K to 580 K. The com
Externí odkaz:
https://doaj.org/article/c17ed29a79cb42189bbd51e555fd404d
Akademický článek
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Publikováno v:
Frontiers in Electronic Materials, Vol 4 (2024)
Space-charge-limited current (SCLC) measurements are commonly employed to characterize charge-transport properties of semiconductors used in next-generation thin-film optoelectronics, such as organic π-conjugated small molecules and polymers, and me
Externí odkaz:
https://doaj.org/article/94cf787be6424ac3af1fe421c1cd4c8e
Autor:
R. Ebner, A. Mittal, G. Ujvari, M. Hadjipanayi, V. Paraskeva, G. E. Georghiou, A. Hadipour, A. Aguirre, T. Aernouts
Publikováno v:
Inorganics, Vol 12, Iss 8, p 219 (2024)
Organic–inorganic hybrid metal halide perovskites are poised to revolutionize the next generation of photovoltaics with their exceptional optoelectronic properties and compatibility with low-cost and large-scale fabrication methods. Since perovskit
Externí odkaz:
https://doaj.org/article/7e24f74d092e4cc8ae3d418497cc43ee
Publikováno v:
Applied Sciences, Vol 14, Iss 13, p 5754 (2024)
Impedance Spectroscopy (IS) is a general term for the technique referring to small-signal measurements of the linear electrical response of a domain of interest. This method is based on the analysis of the system’s electrical response to yield help
Externí odkaz:
https://doaj.org/article/d1ec87a429f641399ac480e40a3f50ab
Autor:
Carlos-Felipe Roa, Emmanuel Chérin, Nidhi Singh, Jianhua Yin, Aaron Boyes, F. Stuart Foster, Christine E. M. Demore
Publikováno v:
Sensors, Vol 24, Iss 6, p 1847 (2024)
Compact high-frequency arrays are of interest for clinical and preclinical applications in which a small-footprint or endoscopic device is needed to reach the target anatomy. However, the fabrication of compact arrays entails the connection of severa
Externí odkaz:
https://doaj.org/article/a203bce2690143b8b18ac19fbe76ec87
Autor:
Grzegorz Głuszko, Lidia Łukasiak, Valeriya Kilchytska, Tsung Ming Chung, Benoit Olbrechts, Denis Flandre, Jean-Pierre Raskin
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It
Externí odkaz:
https://doaj.org/article/5054e077d62642bdae7f352d5f99e2ea
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
This paper presents the results of charge-pumping measurements of SOI MOSFETs. The aim of these measurements is to provide information on the density of interface traps at the front and back Si-SiO2 interface. Three-level charge-pumping is used to ob
Externí odkaz:
https://doaj.org/article/adbaf07b52714d048cad257cc7096153
Autor:
Lutfi Bilal Tasyurek, Frowin Dörr, Mustafa Erkovan, Yasser A. Shokr, Necmettin Kilinc, Paul Fumagalli
Publikováno v:
Engineering Proceedings, Vol 56, Iss 1, p 171 (2023)
In this study, EuS thin films with varying thicknesses (15, 25, and 50 nm) were deposited onto a Si/SiO2 substrate using e-beam evaporation. Subsequently, two Ag contact electrodes with a 0.2 mm spacing were prepared via thermal evaporation using a s
Externí odkaz:
https://doaj.org/article/a325bc98e9a74c929a1de1cfd6ae9b1a