Unusually-high growth rate (∼2.8 μm/s) of germania nanowires and its hierarchical structures by an in-situ continuous precursor supply

Autor: Shaoteng Wu, Qimiao Chen, Lin Zhang, Lim Yu Dian, Hao Zhou, Chuan Seng Tan

Publikováno v: Ceramics International. 49:7180-7186

Low-dimensional nanostructured semiconductors are becoming the promising materials for the further high-performance nanophotonics, nanoelectronics, and quantum devices. To enable these applications, it requires an efficient methodology to control the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16c55850e07ca021c50bb20695da7766
https://doi.org/10.1016/j.ceramint.2021.11.245

Semiconductor core fibres: materials science in a bottle

Autor: John Ballato, Lei Wei, Ursula J. Gibson

Publikováno v: Nature Communications, Vol 12, Iss 1, Pp 1-15 (2021)
Nature Communications

Novel core fibers have a wide range of applications in optics, as sources, detectors and nonlinear response media. Optoelectronic, and even electronic device applications are now possible, due to the introduction of methods for drawing fibres with a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4dae3aa6635abfb337d631294755bef5
https://doaj.org/article/0d259351ed9647bfbf087460e1c925ee

Highly Tensile-Strained Self-Assembled Ge Quantum Dots on InP Substrates for Integrated Light Sources

Autor: Qian Gong, PM Paul Koenraad, Xiren Chen, Liyao Zhang, Yuxin Song, Sebastian Koelling, Chuan Seng Tan, Qimiao Chen, Jun Shao, Yaoyao Li, Shumin Wang, Zhenpu Zhang

Publikováno v: ACS Applied Nano Materials, 4(1), 897-906. American Chemical Society

Highly tensile-strained Ge quantum dots (TS-Ge-QDs) emitting structures with different size were successfully grown on InP substrates by molecular beam epitaxy. Defect-free samples with TS-Ge-QDs were confirmed by transmission electron microscopy. Fi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::507687fc7468f98f20d56cad4e1e2bb4
https://doi.org/10.1021/acsanm.0c03373

Surface-Electrode Ion Trap With Ground Structures for Minimizing the Dielectric Loss in the Si Substrate

Autor: Yu Dian Lim, Chuan Seng Tan, Luca Guidoni, Jing Tao, Anak Agung Alit Apriyana, Peng Zhao, Hongyu Li

Publikováno v: IEEE Transactions on Components, Packaging and Manufacturing Technology
IEEE Transactions on Components, Packaging and Manufacturing Technology, Institute of Electrical and Electronics Engineers, 2020, 10 (4), pp.679-685. ⟨10.1109/TCPMT.2019.2958661⟩

The surface-electrode ion trap is one of the key devices in modern ion-trapping apparatus to host the ion qubits for quantum computing. Surface traps fabricated on the silicon substrate have the versatility for complex electrode fabrication with 3-D

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eba5098a94b4c312ea1396560f1ccb00
https://doi.org/10.1109/tcpmt.2019.2958661

A heavily doped germanium pyramid array for tunable optical antireflection in the broadband mid-infrared range

Autor: Bongkwon Son, Sang-Ho Shin, Yuhao Jin, Yikai Liao, Zhi-Jun Zhao, Jun-Ho Jeong, Qi Jie Wang, Xincai Wang, Chuan Seng Tan, Munho Kim

In this work, we report the heavily doped germanium (Ge) inverted pyramid array as a suitable candidate for tunable antireflection in mid-infrared (MIR) range. Inverted Ge pyramid structures are formed by the metal-assisted chemical etching process.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74b19aea6fd2d67201f5fee6f7f8b361
https://hdl.handle.net/10356/156827