Zobrazeno 1 - 10
of 3 743
pro vyhledávání: '"Electric apparatus and materials. Electric circuits. Electric networks"'
Publikováno v:
Chips, Vol 3, Iss 3, Pp 258-270 (2024)
The analog–mixed signal simulation environment, used for verifying non-volatile memory macrocells, is presented. It has been adopted over the last decade, providing excellent results in verification coverage, efficiency, and flexibility. This metho
Externí odkaz:
https://doaj.org/article/809a050eccb049999c04c0ccd05e23ec
Autor:
Biswajit Jana, Ayan Roy Chaudhuri
Publikováno v:
Chips, Vol 3, Iss 3, Pp 235-257 (2024)
Oxygen vacancy engineering in metal oxides is a propitious route to modulate their resistive switching properties for memory and neuromorphic applications. This review provides an account of the research works on tailoring RS behavior in oxide thin-f
Externí odkaz:
https://doaj.org/article/a13652f89b864266af10716b79bce6be
Autor:
Leonardo Barboni
Publikováno v:
Chips, Vol 3, Iss 3, Pp 229-234 (2024)
This study introduces a rectenna, functioning as an RF envelope detector, utilizing a 16 nm bulk MOS transistor (metal-oxide-semiconductor field-effect transistor) for nonlinear detection. A circuit architecture is presented alongside a detailed desi
Externí odkaz:
https://doaj.org/article/cea7d3f80eaa4fecb46eb7da94f3985c
Autor:
Mario Gazziro, João Paulo Carmo
Publikováno v:
Chips, Vol 3, Iss 3, Pp 216-228 (2024)
This paper provides a comparative analysis of AES (Advanced Encryption Standard) and Salsa20 algorithm implementations, focusing on power consumption efficiency in passive RFID (radio-frequency identification) tags and ultra-low-power devices. The ma
Externí odkaz:
https://doaj.org/article/f5600d6f3a13431287a5c612f01a589b
Publikováno v:
Chips, Vol 3, Iss 2, Pp 182-195 (2024)
Datapath synthesis is a crucial step in synthesis flow and aims at globally minimizing an area by identifying shareable logic structures. This paper introduces a novel Directed Acyclic Graph (DAG)-based datapath synthesis method based on graph isomor
Externí odkaz:
https://doaj.org/article/2a3a0fc01e3444fcb3fd30362198aeb8
Publikováno v:
Chips, Vol 3, Iss 2, Pp 196-215 (2024)
We explore security aspects of a new computing paradigm that combines novel memristors and traditional Complimentary Metal Oxide Semiconductor (CMOS) to construct a highly efficient analog and/or digital fabric that is especially well-suited to Machi
Externí odkaz:
https://doaj.org/article/ce31c50baf97420aa58032c66e786a73
Autor:
Cristiano Calligaro, Umberto Gatti
Publikováno v:
Chips, Vol 3, Iss 2, Pp 129-152 (2024)
This work presents a rad-hard 12-bit 3 MS/s resistor string DAC for space applications. The converter has been developed using rad-hardened techniques both at architecture and layout levels starting from a conventional topology. The design considers
Externí odkaz:
https://doaj.org/article/ff4ff2fae7354723885c536a2ae80178
Autor:
Victor H. Arzate-Palma, David G. Rivera-Orozco, Gerardo Molina Salgado, Federico Sandoval-Ibarra
Publikováno v:
Chips, Vol 3, Iss 2, Pp 153-181 (2024)
A general overview of Noise-Shaping Successive Approximation Register (SAR) analog-to-digital converters is provided, encompassing the fundamentals, operational principles, and key architectures of Noise-Shaping SAR (NS SAR). Key challenges, includin
Externí odkaz:
https://doaj.org/article/14b81047c8dd41799de4bfd088ba00c4
Autor:
Oradee Srikimkaew, Saverio Ricci, Matteo Porzani, Thien Tan Dang, Yusuke Nakaoka, Yuki Usami, Daniele Ielmini, Hirofumi Tanaka
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 10, Pp n/a-n/a (2024)
Abstract This paper proposes a nanoparticle‐based atomic switch network memristive device, capable of both volatile and nonvolatile switching operations, which have not been previously reported for this material. The operational modes can be determ
Externí odkaz:
https://doaj.org/article/22a8a6316af744d8ae1e2aebb80e7e7f
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 10, Pp n/a-n/a (2024)
Abstract Industry 4.0 is accelerating the growth of connected devices, resulting in an exponential increase in generated data. The current semiconductor technology is facing challenges in miniaturization and power consumption, demanding for more effi
Externí odkaz:
https://doaj.org/article/1d09bd681c1a4a03a2a1b13aa5ee3098