Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Elane Coleman"'
Autor:
Elane Coleman, Kate J. Norris, Junce Zhang, Matthew P. Garrett, Nobuhiko P. Kobayashi, Gary S. Tompa
Publikováno v:
Energy Conversion and Management. 96:100-104
We present the fabrication and characterization of single, double, and quadruple stacked flexible silicon nanowire network based thermoelectric modules. From double to quadruple stacked modules, power production increased 27%, demonstrating that stac
Autor:
Matthew P. Garrett, Nobuhiko P. Kobayashi, Elane Coleman, Gary S. Tompa, Kate J. Norris, Junce Zhang
Publikováno v:
MRS Proceedings. 1785:27-33
We present a concept to increase efficiencies utilizing nonlinear elements integrated with our semiconductor nanowire networks. Demonstrated here is power generation with thermoelectric devices made of two nanowire networks, one silicon and one indiu
Publikováno v:
Journal of Electronic Materials. 44:1357-1360
Gallium oxide is a wide-bandgap semiconductor material which is being developed for a range of electronic and electrooptic device applications. Commercial implementation of these devices will require production-scale technology for Ga2O3 film deposit
Autor:
Gary S. Tompa, Elane Coleman, Matthew P. Garrett, Nobuhiko P. Kobayashi, Kate J. Norris, Junce Zhang
Publikováno v:
Journal of Crystal Growth. 406:41-47
Two types of semiconductors, indium phosphide (InP) and silicon (Si), were separately grown on polycrystalline copper foils with the presence of gold colloidal particles. InP was grown with and without carbon deposition by metal organic chemical vapo
Autor:
David M. Fryauf, Kate J. Norris, Junce Zhang, Gary S. Tompa, Elane Coleman, Nobuhiko P. Kobayashi
Publikováno v:
MRS Proceedings. 1543:131-136
Our nation discards more than 50% of the total input energy as waste heat in various industrial processes such as metal refining, heat engines, and cooling. If we could harness a small fraction of the waste heat through the use of thermoelectric (TE)
Autor:
Kate J. Norris, Elane Coleman, Nobuhiko P. Kobayashi, Gary S. Tompa, Andrew J. Lohn, Vernon K. Wong, Takehiro Onishi
Publikováno v:
Surface Science. 606:1556-1559
We discuss an ex-situ monitoring technique based on glancing-angle infrared-absorption used to determine small amounts of erbium antimonide (ErSb) deposited on an indium antimonide (InSb) layer epitaxially grown on an InSb (100) substrate by low pres
Autor:
Takehiro Onishi, Ali Shakouri, Elane Coleman, Nobuhiko P. Kobayashi, Andrew J. Lohn, Gary S. Tompa, Kate J. Norris, Vernon K. Wong
Publikováno v:
Journal of Electronic Materials. 41:971-976
We report the growth of erbium monoantimonide (ErSb) thin films on indium antimonide (100) substrates by low-pressure metalorganic chemical vapor deposition. The growth rate of ErSb thin films shows strong dependency on the growth temperature and the
Autor:
Elane Coleman, Robert D. Cormia, Gary S. Tompa, Kate J. Norris, Andrew J. Lohn, Nobuhiko P. Kobayashi
Publikováno v:
MRS Proceedings. 1439:25-31
Morphologies of silicon nanowires grown by plasma-assisted metalorganic chemical vapor deposition were studied in the presence of various dopant precursors. The varied precursors affected the axial and radial growth rates over orders of magnitude whe
Publikováno v:
physica status solidi (a). 209:171-175
Thermoelectric devices based on three-dimensional networks of highly interconnected silicon nanowires were fabricated and the parameters that contribute to the power factor, namely the Seebeck coefficient and electrical conductivity were assessed. Th
Autor:
Alina Wilson, Goutam Koley, Gary S. Tompa, Elane Coleman, Ifat Jahangir, Nick M. Sbrockey, Amol Singh
Publikováno v:
14th IEEE International Conference on Nanotechnology.