Výsledky vyhledávání - "Elamurugan Raju"

Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD)

Autor: Murugapandiyan Panneerselvam, Elamurugan Raju, Baskaran Subramanian, Subash Navaneethan Vivekanandhan, Mohanbabu Anandan, Yogesh Kumar Verma, Praveen Pechimuthu, Mohammed Wasim, Saminathan Veerappan, Saravana Kumar Radhakrishnan

Publikováno v: Journal of Electronic Materials. 49:4091-4099

This paper presents a systematic study of Al0.23Ga0.77N/GaN/AlxGa1−xN double-heterojunction high-electron-mobility transistors (DH-HEMTs) with a boron-doped P+ GaN cap layer under the gate. The boron-doped GaN cap layer shows great potential to for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6299ae5dcb315d4333c317de6a0f5ace
https://doi.org/10.1007/s11664-020-08113-x

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