Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Elaissa Trybus"'
Autor:
Murielle Golomingi, Jessie Kohler, Christina Lamers, Richard B. Pouw, Daniel Ricklin, József Dobó, Péter Gál, Gábor Pál, Bence Kiss, Arthur Dopler, Christoph Q. Schmidt, Elaissa Trybus Hardy, Wilbur Lam, Verena Schroeder
Publikováno v:
Frontiers in Immunology, Vol 14 (2023)
BackgroundHaemostasis is a crucial process by which the body stops bleeding. It is achieved by the formation of a platelet plug, which is strengthened by formation of a fibrin mesh mediated by the coagulation cascade. In proinflammatory and prothromb
Externí odkaz:
https://doaj.org/article/6f75ad8a067c46fa8645d29059b9d3be
Akademický článek
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Akademický článek
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Publikováno v:
Methods in molecular biology (Clifton, N.J.). 2373
This chapter describes the development of a poly(dimethylsiloxane)-based microfluidic platform that is able to holistically assess and visualize the entire hemostatic process in vitro. The microfluidic platform includes (1) integration of intact endo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0747fa3d0ab025400eded9a235b77697
https://pubmed.ncbi.nlm.nih.gov/34520012
https://pubmed.ncbi.nlm.nih.gov/34520012
Autor:
Elaissa Trybus, Alexander N. Cartwright, Maurice Cheung, Shawn D. Burnham, Gon Namkoong, Walter Henderson, W. Alan Doolittle
Publikováno v:
Journal of Crystal Growth. 288:218-224
The potential of InN as a photovoltaic material is described. For solar applications, several key developments such as p-type doping and solid-state rectifying junctions have yet to be demonstrated. However, the ability of InGaN materials to optimall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77e25efa05442687bd4eee521e571881
https://doi.org/10.1016/j.jcrysgro.2005.12.120
https://doi.org/10.1016/j.jcrysgro.2005.12.120
Autor:
Gon Namkoong, Fei Chen, Alexander N. Cartwright, Madalina Furis, Walter Henderson, Fernando Ponce, J. Mei, R Liu, W. Alan Doolittle, Elaissa Trybus, Maurice Cheung
Publikováno v:
Journal of Crystal Growth. 279:311-315
InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f47c2808c11e9450b61c998d9d1ec2c4
https://doi.org/10.1016/j.jcrysgro.2005.02.041
https://doi.org/10.1016/j.jcrysgro.2005.02.041
Autor:
W. A. Doolittle, Ian T. Ferguson, Elaissa Trybus, Omkar Jani, Myles A. Steiner, Christiana B. Honsberg, Shawn D. Burnham
Publikováno v:
physica status solidi c. 5:1843-1845
This work addresses the required properties and device structures for an InGaN solar cell. Homojunction InGaN solar cells with a bandgap greater than 2.0 eV are specifically targeted due to material limitations. These devices are attractive because o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::670c060cc5bdf55c37ffcb632749cdb8
https://doi.org/10.1002/pssc.200778693
https://doi.org/10.1002/pssc.200778693
Publikováno v:
2009 International Semiconductor Device Research Symposium.
Metal Modulation Epitaxy (MME) [1] was introduced as a new growth technique wherein only the metal fluxes (Al, Ga, In, Si, and Mg) are modulated in a short periodic fashion in a plasma-assisted MBE system, while maintaining a continuous nitrogen plas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fcf8840c8f167a5b730dafe914830bd
https://doi.org/10.1109/isdrs.2009.5378056
https://doi.org/10.1109/isdrs.2009.5378056
Autor:
Gon Namkoong, David C. Look, Daniel Billingsley, Elaissa Trybus, Walter Henderson, W. Alan Doolittle, Michael W. Moseley
Publikováno v:
physica status solidi c. 6
Metal Modulated Epitaxy (S. D. Burnham et al., J. Appl. Phys. 104, 024902 (2008) [1]) is extended to include modulation of both the shutters of Ga and Mg, the Mg being delivered from a Veeco corrosive series valved cracker (S. D. Burnham et al., Mate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a54cae86ca0bf105750c00b00f3a59fc
https://doi.org/10.1002/pssc.200880962
https://doi.org/10.1002/pssc.200880962
Autor:
J.-O. Song, Gon Namkoong, Ian T. Ferguson, Sarah Kurtz, A. Doolittle, Omkar Jani, Yong Huang, Christiana B. Honsberg, Elaissa Trybus
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
One of the key requirements to achieve solar conversion efficiencies greater than 50% is a photovoltaic device with a band gap of 2.4 eV or greater. InxGa1-xN is one of a few alloys that can meet this key requirement. InGaN with indium compositions v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61cb449f9ee3162d14ff8cb7c8309a09
https://doi.org/10.1109/wcpec.2006.279337
https://doi.org/10.1109/wcpec.2006.279337