Zobrazeno 1 - 10
of 28
pro vyhledávání: '"El Dirani, Hassan"'
Autor:
El dirani, Hassan
Durant les 5 dernières décennies, les technologies CMOS se sont imposées comme méthode de fabrication principale pour les circuits semi-conducteurs intégrés avec notamment le transistor MOSFET. Néanmoins, la miniaturisation de ces transistors
Externí odkaz:
http://www.theses.fr/2017GREAT098/document
Autor:
Parihar, Mukta Singh, Lee, Kyung Hwa, Park, Hyung Jin, Lacord, Joris, Martinie, Sébastien, Barbé, Jean-Charles, Xu, Yue, El Dirani, Hassan, Taur, Yuan, Cristoloveanu, Sorin, Bawedin, Maryline
Publikováno v:
In Solid State Electronics May 2018 143:41-48
Autor:
El Dirani, Hassan, Fonteneau, Pascal, Solaro, Yohann, Legrand, Charles-Alex, Marin-Cudraz, David, Ferrari, Philippe, Cristoloveanu, Sorin
Publikováno v:
In Solid State Electronics February 2017 128:180-186
Autor:
El Dirani, Hassan, Solaro, Yohann, Fonteneau, Pascal, Legrand, Charles-Alex, Marin-Cudraz, David, Golanski, Dominique, Ferrari, Philippe, Cristoloveanu, Sorin
Publikováno v:
In Solid State Electronics November 2016 125:103-110
Autor:
El Dirani, Hassan
Publikováno v:
Micro and nanotechnologies/Microelectronics. Université Grenoble Alpes, 2017. English. ⟨NNT : 2017GREAT098⟩
During the past 5 decades, Complementary Metal Oxide Semiconductor (CMOS) technology was the dominant fabrication method for semiconductor integrated circuits where Metal Oxide Semiconductor Field Effect Transistor (MOSFET) was and still is the centr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::82fd41c7e30830f364563e14fad3ae3c
https://tel.archives-ouvertes.fr/tel-01798886/document
https://tel.archives-ouvertes.fr/tel-01798886/document
Autor:
Navarro, Carlos, Duan, Meng, Parihar, Mukta Sing, Adamu-Lema, Fikru, Coseman, Stefan, Lacord, Joris, Lee, Kyunghwa, Sampedro, Carlos, Cheng, Binjie, El Dirani, Hassan, Barbe, Jean-Charles, Fonteneau, Pascal, Kim, Seong-Il, Cristoloveanu, Sorin, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Riel, Heike, Wells, Paul, Kim, Yong-Tae, Asenov, Asen, Gamiz, Francisco
2-D numerical simulations are used to demonstrate the Z²-FET as a competitive embedded capacitor-less dynamic random access memory cell for low-power applications. Experimental results in 28-nm fully depleted-silicon on insulator technology are used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::2d312a5673bc7f0d38ce03a26291f74d
https://eprints.gla.ac.uk/151818/1/151818.pdf
https://eprints.gla.ac.uk/151818/1/151818.pdf
Akademický článek
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Autor:
Navarro, Carlos, Lacord, Joris, Parihar, Mukta Singh, Adamu-Lema, Fikru, Duan, Meng, Rodriguez, Noel, Cheng, Binjie, El Dirani, Hassan, Barbe, Jean-Charles, Fonteneau, Pascal, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Wells, Paul, Kim, Yong-Tae, Asenov, Asen, Cristoloveanu, Sorin, Gamiz, Francisco
The Z²-FET operation as capacitorless DRAM\ud is analyzed using advanced 2-D TCAD simulations for IoT\ud applications. The simulated architecture is built based on\ud actual 28-nm fully depleted silicon-on-insulatordevices. It is\ud found that the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::e6cc2ed9886c9e6c8cb315a76dc92cb9
https://eprints.gla.ac.uk/150366/1/150366.pdf
https://eprints.gla.ac.uk/150366/1/150366.pdf
Akademický článek
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Autor:
Cristoloveanu, Sorin, El Dirani, Hassan, Solaro, Yohann, Wan, Jing, Zaslavsky, Alexander, Fonteneau, P., Ferrari, Phillipe, M., Bawedin
Publikováno v:
8th Int. Workshop on Advanced Materials Science and Technology (IWAMSN 2016)
8th Int. Workshop on Advanced Materials Science and Technology (IWAMSN 2016), Nov 2016, Ha Long, Vietnam
8th Int. Workshop on Advanced Materials Science and Technology (IWAMSN 2016), Nov 2016, Ha Long, Vietnam
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::bb842046cae06401e59d8382949d0db5
https://hal.archives-ouvertes.fr/hal-02009907
https://hal.archives-ouvertes.fr/hal-02009907