Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Ekatarina Yurchuk"'
Autor:
Johannes Mueller, Christoph Adelmann, Uwe Schroeder, Stefan Mueller, Dominik Martin, Thomas Mikolajick, Ekatarina Yurchuk, Till Schloesser, Ralf van Bentum
The ferroelectric behavior of capacitors based on hafnium oxide dielectrics will be reported. Thin films of 6-30 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based metal-insulator-met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::720d63e74c9b4dfcc38b652e1eba3f4b
https://publica.fraunhofer.de/handle/publica/234950
https://publica.fraunhofer.de/handle/publica/234950
Publikováno v:
2010 IEEE International Integrated Reliability Workshop Final Report.
In this publication a formula is developed to describe the program level dependent charge loss of charge trapping memory cells. We demonstrate that the retention loss can be calculated using 5 parameters with an excellent agreement to the measured re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3ad0e8e68adc7d13382dd8af7c6b905
https://doi.org/10.1109/iirw.2010.5706502
https://doi.org/10.1109/iirw.2010.5706502
Autor:
Uwe Schroeder, Johannes Mueller, Ekatarina Yurchuk, Stefan Mueller, Dominik Martin, Stefan Slesazeck, Thomas Mikolajick
Publikováno v:
ECS Meeting Abstracts. :2576-2576
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3291fe6a064f1283c18f633a5e807a0
https://doi.org/10.1149/ma2012-02/31/2576
https://doi.org/10.1149/ma2012-02/31/2576