Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Ej Thrush"'
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Microscopy of Semiconducting Materials 2003
Microscopy of Semiconducting Materials 2003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e4b4d04fb6c620a35f33b86f6190dad
https://doi.org/10.1201/9781351074636-65
https://doi.org/10.1201/9781351074636-65
Publikováno v:
2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).
In this study, the degradation mechanism of InGaN/GaN laser diodes has been investigated using cross-sectional electron beam induced current (EBIC) imaging, combined with scanning electron microscopy (SEM). By comparing the EBIC images of an untested
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f7f542439e092f8d09455085e89a8ed
https://doi.org/10.1109/ifws.2017.8245970
https://doi.org/10.1109/ifws.2017.8245970
Publikováno v:
physica status solidi c. 9:765-769
EL measurements have been made on a number of commercial LEDs as a function of drive current density “J” and temperature “T”. For one type of LED, (sample A), the magnitude of the peak in quantum efficiency (QE) is almost independent of tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a47998ccb7d41738ee8529559c40922
https://doi.org/10.1002/pssc.201100458
https://doi.org/10.1002/pssc.201100458
Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®
Autor:
Conor Martin, A.V. Kondratyev, M. Dauelsberg, E.V. Yakovlev, H. Protzmann, Roman Talalaev, Ej Thrush, Adam Boyd, Michael Heuken
Publikováno v:
Journal of Crystal Growth. 303:318-322
The modelling and subsequent experimental validation of nitride growth processes in commercial, production scale multi-wafer reactors is investigated with focus on group-III nitride compounds GaN and InGaN. The paper also deals with the development o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::151778f6b5551a34897857e50ba2598e
https://doi.org/10.1016/j.jcrysgro.2006.11.151
https://doi.org/10.1016/j.jcrysgro.2006.11.151
Autor:
Philip Dawson, N. P. Hylton, Dandan Zhu, Darren M. Graham, Menno J. Kappers, Colin J. Humphreys, G. R. Chabrol, Ej Thrush, Clifford McAleese
Publikováno v:
Journal of Crystal Growth. 298:504-507
We have studied the optical properties of a series of InGaN/AlInGaN 10-period multiple quantum wells (MQW) with differing well thickness grown by metal-organic vapor-phase epitaxy that emit at around 380 nm. The aim of this investigation was to optim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::018141cfc5a4eb773ee6344133bd8979
https://doi.org/10.1016/j.jcrysgro.2006.10.155
https://doi.org/10.1016/j.jcrysgro.2006.10.155
Autor:
Michael Heuken, J. Käppeler, Adam Boyd, Conor Martin, Ej Thrush, E.V. Yakovlev, H. Protzmann, Roman Talalaev, A.V. Kondratyev, M. Dauelsberg
Publikováno v:
Journal of Crystal Growth. 298:418-424
The metalorganic vapor-phase epitaxy (MOVPE) growth of GaN from TMGa and NH3 at higher process pressures up to near-atmospheric pressure in commercial production scale multi-wafer reactors is investigated. The Planetary Reactor® and close coupled sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23ab8af7245aede8c53cd06ce5d13a08
https://doi.org/10.1016/j.jcrysgro.2006.10.046
https://doi.org/10.1016/j.jcrysgro.2006.10.046
Publikováno v:
physica status solidi c. 3:2145-2148
A methodology of temperature current-voltage characterisation for blue GaN-based LED is described, with emphasis on artefacts arising from self-heating at high forward currents and voltage transients at low forward currents. Examples of LEDs with Al2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4c8a6413595c7fec62244661f73fc91
https://doi.org/10.1002/pssc.200565210
https://doi.org/10.1002/pssc.200565210
Autor:
M. J. Godfrey, Menno J. Kappers, Philip Dawson, Colin J. Humphreys, Mary E. Vickers, Ej Thrush, Ranjan Datta, Darren M. Graham, P. M. F. J. Costa
Publikováno v:
physica status solidi c. 3:1970-1973
We present a study of the optical properties of a series of InGaN/GaN multiple quantum well structures, with room temperature peak emission wavelengths of 540 nm. By adopting a two-temperature growth method and designing structures to have short radi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf923ccba9da886c06e9878b86bbd9aa
https://doi.org/10.1002/pssc.200565252
https://doi.org/10.1002/pssc.200565252
Autor:
Ej Thrush, Menno J. Kappers, Jonathan S. Barnard, Philip Dawson, Darren M. Graham, Colin J. Humphreys, M. J. Godfrey
Publikováno v:
physica status solidi c. 3:2001-2004
The optical properties of InGaN/GaN single quantum well structures, with indium fractions of 0.15 and 0.25, have been studied under resonant excitation conditions. The low temperature (T = 6 K) photoluminescence spectra show a broad recombination fea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed273e0566d6439bcb5ac1f5cf99f163
https://doi.org/10.1002/pssc.200565243
https://doi.org/10.1002/pssc.200565243
Autor:
Jack Mullins, Ranjan Datta, Philip Dawson, Darren M. Graham, P. M. F. J. Costa, Ej Thrush, Colin J. Humphreys, M. J. Godfrey, Menno J. Kappers, Mary E. Vickers
Publikováno v:
physica status solidi (a). 203:1729-1732
Strain relaxation has been studied for the 10-period quantum well (QW) heterostructures grown by MOVPE, In 0.16 Ga 0.84 N/GaN and In 0.2 Ga 0.8 N/GaN, both emitting with high efficiency in the blue and green regions, respectively. Additionally, a set
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::644e2b8175c2a39ff0921a2ab2fe8739
https://doi.org/10.1002/pssa.200565219
https://doi.org/10.1002/pssa.200565219