Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Eivind Øvrelid"'
Publikováno v:
SiliconPV Conference Proceedings, Vol 1 (2024)
In principle, growing a dislocation-free Czochralski silicon ingot is possible if the growth process is kept stable and below the critical resolved shear stress value. However, in practice, a considerable proportion of the Si ingots are remelted due
Externí odkaz:
https://doaj.org/article/08f4360c59254d47a7f70522df3aa49e
Publikováno v:
Journal of Crystal Growth. 510:1-6
In the production of monocrystalline silicon by the Czochralski process, structure loss frequently reduces yield and increases production time. Structure loss means the transition from monocrystalline to multicrystalline structure. It is typically pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51b662fa4c16394391caf9f36e7ec3c4
https://doi.org/10.1016/j.jcrysgro.2019.01.005
https://doi.org/10.1016/j.jcrysgro.2019.01.005
Autor:
Marisa Di Sabatino Lundberg, Eivind Øvrelid, Moez Jomâa, Mohammed M’Hamdi, Øyvind Sunde Sortland
Publikováno v:
AIP Conference Proceedings
In Czochralski monocrystalline silicon growth, structure loss (SL) is the loss of the mono-crystalline structure. It represents a significant loss of productivity. In this work, this phenomenon is investigated by statistical analysis of production da
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff2e1982600a1141424725dee5927efb
https://doi.org/10.1063/1.5123875
https://doi.org/10.1063/1.5123875
Autor:
Lars Arnberg, Guilherme Gaspar, Sindy Würzner, Eivind Øvrelid, Gianluca Coletti, Marisa Di Sabatino, Mari Juel, Rune Søndenå
Publikováno v:
Solar Energy Materials and Solar Cells. 153:31-43
Four industrial-scale n-type Czochralski silicon crystals were grown with different impurity contents, i.e. metallics, phosphorus and oxygen. Horizontal slices were obtained from the top and middle of the crystals and were characterized in terms of l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::faebafadeedc5e74cf2474b7ab5c6088
https://doi.org/10.1016/j.solmat.2016.04.008
https://doi.org/10.1016/j.solmat.2016.04.008
Publikováno v:
physica status solidi c. 13:827-832
This study aims at better understanding the generation of dislocations causing a structure loss issue during the pulling of Czochralski silicon ingots. Several industrial-scale n-type ingots containing this issue were characterized. The generation an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4e57a3808ad9fb145cf3b1047f627b9
https://doi.org/10.1002/pssc.201600063
https://doi.org/10.1002/pssc.201600063
Autor:
Rune Søndenå, Mari Juel, Lars Arnberg, Eivind Øvrelid, Marisa Di Sabatino, Guilherme Gaspar, Soraia Pascoa
Publikováno v:
Journal of Crystal Growth. 418:176-184
Industrial scale n-type monocrystalline silicon ingots with different crown shape and shouldering area have been grown and characterized in terms of minority carrier lifetime, resistivity and concentration and distribution of interstitial oxygen (O i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1735add9fdb242eae71e699bb29c384
https://doi.org/10.1016/j.jcrysgro.2015.02.032
https://doi.org/10.1016/j.jcrysgro.2015.02.032
Publikováno v:
Journal of Crystal Growth. 411:63-70
The objective of the current work was to understand the effect of carbon as an impurity in silicon in terms of the formation of as-grown oxygen defects and the subsequent behavior of these defects in n-type Czochralski (Cz) silicon during heat treatm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::050e2e0f807f61af737f9408fe432545
https://doi.org/10.1016/j.jcrysgro.2014.11.002
https://doi.org/10.1016/j.jcrysgro.2014.11.002
Autor:
Gaute Stokkan, Alexander Ulyashin, Arjan Ciftja, Eivind Øvrelid, Rajko Buchwald, Sindy Würzner, Hans Joachim Möller
Publikováno v:
physica status solidi (a). 212:25-29
The purpose of this work is to verify the possibility to process highly doped Si supporting substrates using a 2-step process: (i) sintering of a low-cost Si powder based ingot using hot pressing and a ELKEM Silgrain material as a feedstock; and (ii)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6911caa9100f6b8ccf1e38e68e7b3404
https://doi.org/10.1002/pssa.201431782
https://doi.org/10.1002/pssa.201431782
Polycrystalline silicon (commonly called'polysilicon') is the material of choice for photovoltaic (PV) applications. Polysilicon is the purest synthetic material on the market, though its processing through gas purification and decomposition (commonl
Publikováno v:
The Minerals, Metals & Materials Series ISBN: 9783319521916
This study presents a new testing method to analyze the bubble content and distribution in quartz crucibles for monocrystalline silicon ingots. Two different types of silica (SiO2) crucibles have been investigated, before and after use during Czochra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0e2819ce3ab5023e8b2bcbcd12ddc4c
https://doi.org/10.1007/978-3-319-52192-3_38
https://doi.org/10.1007/978-3-319-52192-3_38