Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Eisuke Yonekura"'
Autor:
Shiori Konoshima, Eisuke Yonekura, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano
Publikováno v:
AIP Advances, Vol 8, Iss 7, Pp 075112-075112-9 (2018)
Uniaxially strained Ge/SiGe heterostructures are fabricated by selective ion implantation technique, where dislocation alignments are highly controlled by the local defect introduction. Firstly, ion-implantation-defects are selectively induced into
Externí odkaz:
https://doaj.org/article/35406616a0c84a84ae69062828a93957
Autor:
Takuya Sakurai, Kentarou Sawano, Eiji Ikenaga, Shunta Yamahori, Eisuke Yonekura, Tomoya Sasago, Hiroshi Nohira
Publikováno v:
ECS Transactions. 64:431-439
Since the aggressive scaling of the Si-based metal–oxide–semiconductor field effect transistors (MOSFET) is reaching its limits, the strained-Ge and III–V semiconductors are being studied extensively as one of the alternative channel materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f385990574adfabacddd806c79a993b1
https://doi.org/10.1149/06406.0431ecst
https://doi.org/10.1149/06406.0431ecst
Autor:
Keisuke Arimoto, Shiori Konoshima, Kiyokazu Nakagawa, Junji Yamanaka, Eisuke Yonekura, Kentarou Sawano
Publikováno v:
AIP Advances, Vol 8, Iss 7, Pp 075112-075112-9 (2018)
Uniaxially strained Ge/SiGe heterostructures are fabricated by selective ion implantation technique, where dislocation alignments are highly controlled by the local defect introduction. Firstly, ion-implantation-defects are selectively induced into a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7275f3902af6ea01bff85cc6dcbe87d
https://doi.org/10.1063/1.5011397
https://doi.org/10.1063/1.5011397