Zobrazeno 1 - 10
of 220
pro vyhledávání: '"Eisuke Tokumitsu"'
Autor:
Eisuke Tokumitsu, Isato Ogawa, Yuta Miyabe, Homare Yoshida, Tomoharu Yokoyama, Yuma Ishisaki, Yasuhiko Nakashima, Mutsumi Kimura, Kenichi Haga
Publikováno v:
IEEE Transactions on Neural Networks and Learning Systems. 34:2366-2373
Artificial intelligence is used for various applications and is promising as an indispensable infrastructure in future societies. Neural networks are representative technologies that imitate human brains and exhibit various advantages. However, the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4607baa353c90b114c7141de8ee18494
https://doi.org/10.1109/tnnls.2021.3106566
https://doi.org/10.1109/tnnls.2021.3106566
Autor:
Md Mehedi Hasan, null Mohit, Md Mobaidul Islam, Ravindra Naik Bukke, Eisuke Tokumitsu, Hye-Yong Chu, Sung Chul Kim, Jin Jang
Publikováno v:
IEEE Electron Device Letters. 43:725-728
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10628ce699daa445bd406b7c18999620
https://doi.org/10.1109/led.2022.3162325
https://doi.org/10.1109/led.2022.3162325
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1084
We demonstrate a three-terminal variable-area capacitor integrated with a ferroelectric-gate field-effect transistor (FeFET) and a ferroelectric capacitor. A FeFET using an indium tin oxide (ITO) channel and a ferroelectric Hf0.86Ce0.14O2 gate insula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d61e8bc0b8fa4a8b20627f58f363ee34
https://doi.org/10.35848/1347-4065/acb4fc
https://doi.org/10.35848/1347-4065/acb4fc
Autor:
Md Mehedi Hasan, Samiran Roy, null Mohit, Eisuke Tokumitsu, Hye-Yong Chu, Sung Chul Kim, Jin Jang
Publikováno v:
Applied Surface Science. 611:155533
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe7f00395b17116b6586e13c2f16bb06
https://doi.org/10.1016/j.apsusc.2022.155533
https://doi.org/10.1016/j.apsusc.2022.155533
Publikováno v:
Japanese Journal of Applied Physics. 61:SN1027
Y-doped Hf–Zr–O (Y-HZO) films have been prepared by chemical solution deposition. It is shown that good ferroelectric property can be obtained for the Y-HZO film with a Y concentration of 3.2% after 800 °C crystallization annealing at a reduced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5693a19d3177b2073a8ab2105d6d7a81
https://doi.org/10.35848/1347-4065/ac7fda
https://doi.org/10.35848/1347-4065/ac7fda
Publikováno v:
2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
The neuromorphic system is a hardware-level biosimulation system that implements neuron and synaptic elements. It has the same advantages as the human brain, such as low power consumption and small size. We proposed the synapse consisting of a memcap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14f8dbc4faccf498d46dee63bac335eb
https://doi.org/10.23919/am-fpd52126.2021.9499195
https://doi.org/10.23919/am-fpd52126.2021.9499195
Publikováno v:
Applied Physics Letters. 120:262901
We propose a three-terminal variable-area capacitor integrated with a ferroelectric-gate field-effect transistor (FeFET) and a paraelectric thin-film capacitor. Owing to the large charge controllability and nonvolatile memory function of the ferroele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae2710ee1e19f9edaf63073422b4e425
https://doi.org/10.1063/5.0089049
https://doi.org/10.1063/5.0089049
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. :2100581
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53b569acbe4a5a2ad1c44d2dbd4ffc8a
https://doi.org/10.1002/pssr.202100581
https://doi.org/10.1002/pssr.202100581
Autor:
null Mohit, Yuli Wen, Yuki Hara, Shinji Migita, Hiroyuki Ota, Yukinori Morita, Keisuke Ohdaira, Eisuke Tokumitsu
Publikováno v:
Japanese Journal of Applied Physics. 61:SH1004
Effects of catalytically generated atomic hydrogen (Cat-H) treatment on electrical properties of 10 nm thick sputtered hafnium-zirconium-oxide (HZO) films have been investigated. It is demonstrated that the Cat-H treatment to the as-deposited sputter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53f45bcd602f5e130da8a913f4184a3c
https://doi.org/10.35848/1347-4065/ac5a95
https://doi.org/10.35848/1347-4065/ac5a95
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d612c5f4771f47fca8ee4d45826170ca
https://doi.org/10.7567/ssdm.2020.j-2-04
https://doi.org/10.7567/ssdm.2020.j-2-04