Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Eisuke Suekawa"'
Autor:
Kensuke Taguchi, Hideki Haruguchi, Kazuhiko Hasegawa, Yasuo Ata, Eisuke Suekawa, Naoto Kaguchi, Yu Nakashima, Yasuhiro Kagawa, Tadaharu Minato
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
It is tough for SiC MOSFET to maintain the same time width (tw) of Unloaded Short Circuit mode Switching (USCS), which we define as the index of the Short Circuit Safety Operation Area (SCSOA) evaluation comparing with Unclamped Inductive Switching (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da60ccb5908cd7756a8240e29319d264
https://doi.org/10.1109/ispsd46842.2020.9170172
https://doi.org/10.1109/ispsd46842.2020.9170172
Autor:
Eisuke Suekawa, Masayoshi Tarutani, Shigehisa Yamamoto, Masayuki Imaizumi, Yuji Ebiike, Takeshi Murakami, Hiroaki Sumitani
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
3.3 kV 4H-SiC MOSFETs with various buffer layer thickness has been fabricated in order to investigate the bipolar degradation associated with the expansion of stacking faults (SFs). The body diode stress tests under DC current of 240 A/cm2 were perfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe28f8192546e344d7b5274edba2e95c
https://doi.org/10.1109/ispsd.2018.8393699
https://doi.org/10.1109/ispsd.2018.8393699
Autor:
Masayuki Imaizumi, Naoki Yutani, Toshikazu Tanioka, Masayuki Furuhashi, S. Yamakawa, Yuji Ebiike, Eisuke Suekawa, Tatsuo Oomori, Yoichiro Tarui, Naruhisa Miura, Shinji Sakai
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
The threshold voltage of 4H-SiC MOSFET increases drastically by performing wet oxidation after nitridation of gate oxide without significant decrease in the channel effective mobility. The increment of the threshold voltage depends on the wet oxidati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61fc1a19c8375e8fe41d7d8090af4bcf
https://doi.org/10.1109/ispsd.2013.6694397
https://doi.org/10.1109/ispsd.2013.6694397
Autor:
Masayuki Imaizumi, Satoshi Yamakawa, Isao Umezaki, Eisuke Suekawa, Hiroshi Watanabe, Naruhisa Miura, Kenji Hamada, Shuhei Nakata, Yuji Ebiike, Shiro Hino
Publikováno v:
Japanese Journal of Applied Physics. 54:04DP07
We have successfully developed 4H-SiC devices including metal–oxide–semiconductor field-effect transistors (MOSFETs) and Schottky barrier diodes (SBDs) with a rated voltage of 3.3 kV. The conduction loss of the SiC-MOSFET was reduced to as low as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::644006c6f94c1f7ac165516f9ba26cbe
https://doi.org/10.7567/jjap.54.04dp07
https://doi.org/10.7567/jjap.54.04dp07
Publikováno v:
ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..
For High Voltage IGBT (HV-IGBT), it is required that a good matching with Free Wheeling Diode (FWD) is considered because of the latter's high transient forward voltage. Therefore, we studied transient characteristics of the free wheel mode in HV-IGB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfd5ecaa79de890ff792dada0fd29b34
https://doi.org/10.1109/ispsd.2003.1225254
https://doi.org/10.1109/ispsd.2003.1225254
Publikováno v:
8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.
Computer simulation for reverse recovery characteristics of a planar diode revealed that local heating occurred at the corner of the anode even when a surge voltage across the diode was lower than its static breakdown voltage. Analysis for origin of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b8f5cd08c459b143bdc6bafe15b0c82
https://doi.org/10.1109/ispsd.1996.509514
https://doi.org/10.1109/ispsd.1996.509514
Publikováno v:
Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).
For high voltage IGBTs (HV-IGBTs; rated collector voltage over 2.5 kV), it is very important that the thickness of the n/sup -/ layer (tn/sup -/) is thin to improve the trade-off relationship between collector-emitter saturation voltage (V/sub ce/(sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3206fa9f30b906da0885a55f5d8fdafc
https://doi.org/10.1109/ispsd.1998.702680
https://doi.org/10.1109/ispsd.1998.702680
Publikováno v:
Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.
Computer simulation analysis predicts that shorted collector IGBT is heated locally in free wheeling mode of operation to such extent that excess temperature, depending on operating and circuit conditions, destroys itself and this is verified by expe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b767e61029a1c0b967f21585358d3e8
https://doi.org/10.1109/ispsd.1997.601474
https://doi.org/10.1109/ispsd.1997.601474
Autor:
Kenji Hamada, Shiro Hino, Naruhisa Miura, Hiroshi Watanabe, Shuhei Nakata, Eisuke Suekawa, Yuji Ebiike, Masayuki Imaizumi, Isao Umezaki, Satoshi Yamakawa
Publikováno v:
Japanese Journal of Applied Physics; Apr2015, Vol. 54 Issue 4S, p1-1, 1p