Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Eisuke Narita"'
Publikováno v:
SPIE Proceedings.
Several challenges hinder extreme ultraviolet lithography (EUVL) photomask fabrication and its readiness for high volume manufacturing (HVM). The lack in availability of pristine defect-free blanks as well as the absence of a robust mask repair techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ae98569524a110501c66394829f36fe
https://doi.org/10.1117/12.2239421
https://doi.org/10.1117/12.2239421
Autor:
Jed H. Rankin, Christina Turley, Scott Halle, Zhengqing John Qi, Eisuke Narita, Ravi K. Bonam, Mark Lawliss, Kazunori Seki, Karen D. Badger
Publikováno v:
SPIE Proceedings.
As Extreme Ultraviolet (EUV) lithography has matured, numerous imposing technical challenges have been the focus of intense scrutiny, including the EUV radiation source, reflective optics, and fundamental mask fabrication. There has been a lurking qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4778d5bcd327c1f58cb4e8b31ed65f03
https://doi.org/10.1117/12.2197476
https://doi.org/10.1117/12.2197476
Publikováno v:
SPIE Proceedings.
Several challenges hinder EUV photomask fabrication and its readiness for high volume manufacturing (HVM). The lack in availability of pristine defect-free blanks as well as the absence of a robust mask repair technique mandates defect mitigation thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6882f6562d4d31719892a380e0f1037c
https://doi.org/10.1117/12.2197922
https://doi.org/10.1117/12.2197922
Autor:
Ravi K. Bonam, Masayuki Kagawa, Takeshi Isogawa, Kevin W. Collins, Mark Lawliss, Lin Cheong, Jed H. Rankin, Eisuke Narita, Richard Poro, Luke Bolton, Louis Kindt, Christina Turley
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
The backside of photomasks have been largely ignored during the last several decades of development, with the exception of avoiding gross damage or defects, as almost all problems are far enough out of the focal plane to have minimal effect on imagin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7668026b297ead3a0c08413b3180d566
https://doi.org/10.1117/12.2197383
https://doi.org/10.1117/12.2197383
Autor:
Ravi K. Bonam, Masayuki Kagawa, Steven C. Nash, Yoshifumi Sakamoto, Jonathan Grohs, Eisuke Narita, Emily Gallagher, Louis Kindt, Christina Turley
Publikováno v:
SPIE Proceedings.
The black border is a frame created by removing all the multilayers on the EUV mask in the region around the chip. It is created to prevent exposure of adjacent fields when printing an EUV mask on a wafer. Papers have documented its effectiveness. As
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2cf043febd1f70b8711232f75fe3310
https://doi.org/10.1117/12.2070047
https://doi.org/10.1117/12.2070047
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 15:029801
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ae15e10d0c120661462ec06de591e7a
https://doi.org/10.1117/1.jmm.15.2.029801
https://doi.org/10.1117/1.jmm.15.2.029801