Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Eisuke Anju"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1239-1245 (2018)
In this paper, we investigated the source/drain recessed contact structure to mitigate the self-heating-effects in vertically stacked-nanowire FETs. As a result, lattice temperature of nanowire regions during device operation was considerably decreas
Externí odkaz:
https://doaj.org/article/ce1ee70626f74aaeaca5484246517df9
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1239-1245 (2018)
In this paper, we investigated the source/drain recessed contact structure to mitigate the self-heating-effects in vertically stacked-nanowire FETs. As a result, lattice temperature of nanowire regions during device operation was considerably decreas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1dda8f28a821a2cadd2ce1c3a4129e63
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100813953
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100813953
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
CMOS-device improvements have been recently investigated by changing the geometry of the device from FinFET to nanowire (NW), in which self-heating is serious issue. In this work, we simulate the NW FETs with not only electrical contact but also ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3bb506f03fcd8d70bab04aae19215e4
https://doi.org/10.1109/edtm.2018.8421428
https://doi.org/10.1109/edtm.2018.8421428