Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Eissler, Elgin E."'
Autor:
Xu, Wen-Qing, Li, Xiaoming, Patkar, Shailesh, Eissler, Elgin E., Fuertes Arias, Antonio Benito, Sevilla Solís, Marta
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
Digital.CSIC: Repositorio Institucional del CSIC
Consejo Superior de Investigaciones Científicas (CSIC)
instname
Digital.CSIC: Repositorio Institucional del CSIC
Consejo Superior de Investigaciones Científicas (CSIC)
In a method of preparing an immobilized selenium system or body, a selenium - carbon - oxygen mixture is formed. The mixture is then heated to a temperature above the melting temperature of selenium and the heated mixture is then cooled to ambient or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::6edadc20306c9a852665aca76bb7a952
http://hdl.handle.net/10261/243398
http://hdl.handle.net/10261/243398
Publikováno v:
Journal of Modern Physics. :770-785
The chemical vapor deposition (CVD) process can produce single or poly-crystalline diamond samples of high purity or with controlled doping concentrations. The defect type in the CVD diamonds can be changed by heating the samples. Controlling the def
Autor:
Nemanja Krsmanovic, Eissler Elgin E, J. P. Flint, Marc H. Weber, Howard L. Glass, Th. Gessmann, Russell B. Tjossem, Cs. Szeles, Kelvin G. Lynn
Publikováno v:
Physical Review B. 62:R16279-R16282
The effects of two intrinsic deep levels on electrical compensation in semi-insulating CdTe and Cd-Zn-Te crystals are reported here. These levels were found in samples grown by conventional Bridgman and high-pressure Bridgman techniques. The levels w
Publikováno v:
Physical Review B. 55:6945-6949
The trapping and thermal emission of holes were studied from a deep acceptor level created during thermal annealing of a ${\mathrm{Cd}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Zn}}_{\mathrm{x}}$Te (x=0.12) crystal grown by the high-pressure Br
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 380:148-152
The behavior of deep electronic levels was studied as a function of Zn concentration in CdZnTe crystals grown by the high-pressure Bridgman technique using thermoelectric effect spectroscopy. A significant increase of the thermal ionization energies
Autor:
Kelvin G. Lynn, Eissler Elgin E
Publikováno v:
IEEE Transactions on Nuclear Science. 42:663-667
Zinc Selenide (ZnSe) crystals grown using the High Pressure Bridgman (HPB) technique were used to fabricate solid-state radiation detectors measuring 10/spl times/10/spl times/2 mm/sup 3/. Sputtered platinum and gold contacts were applied to polished
Publikováno v:
1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record.
CdZnTe has become a material of great interest in the field of X- and /spl gamma/-ray imaging, and shows great promise as a highly efficient, room-temperature operation detector. However, data on the timing resolution obtainable with this material is
Publikováno v:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics.
The charge transport properties and radiation detector performance of semi-insulating CdTe single crystal grown by the conventional vertical Bridgman technique in this paper. The measured room-temperature electrical resistivity of the crystals is bel
Autor:
Csaba Szeles, Eissler Elgin E
Publikováno v:
MRS Proceedings. 484
The availability of large-size, detector-grade CdZnTe crystals in large volume and at affordable cost is a key to the further development of radiation-detector applications based on this II-VI compound. The high pressure Bridgman technique that suppl
Autor:
Eissler Elgin E, C. J. Johnson, Y. Kong, Scott E. Cameron, Kelvin G. Lynn, S. Fan, S. Jovanovic
Publikováno v:
MRS Proceedings. 299
Radiation detector grade CdTe crystals are characterized by several crystallographic and metallurgical techniques including infrared microscopy, dislocation etch pitting and X-ray diffraction. Results are presented for 50 detectors fabricated from an