Výsledky vyhledávání - "Einar O. Sveinbjörnsson"

Akademický článek

Observations of very fast electron traps at SiC/high-κ dielectric interfaces

Autor: Arnar M. Vidarsson, Axel R. Persson, Jr-Tai Chen, Daniel Haasmann, Jawad Ul Hassan, Sima Dimitrijev, Niklas Rorsman, Vanya Darakchieva, Einar Ö. Sveinbjörnsson

Publikováno v: APL Materials, Vol 11, Iss 11, Pp 111121-111121-7 (2023)

Very fast interface traps have recently been suggested to be the main cause behind poor channel-carrier mobility in SiC metal–oxide–semiconductor field effect transistors. It has been hypothesized that the NI traps are defects located inside the

Externí odkaz: https://doaj.org/article/47769d9eaac04af9925d4bf883195c57

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Akademický článek

Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation

Autor: Arnar M. Vidarsson, Daniel Haasmann, Sima Dimitrijev, Einar Ö. Sveinbjörnsson

Publikováno v: AIP Advances, Vol 13, Iss 5, Pp 055126-055126-6 (2023)

Very fast interface traps have recently been suggested to be the main cause behind the rather poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors (MOSFETs). Using capacitance voltage analysis and conduct

Externí odkaz: https://doaj.org/article/d506495a46fc4126b2140416c3c1a335

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Akademický článek

The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers

Autor: Misagh Ghezellou, Piyush Kumar, Marianne E. Bathen, Robert Karsthof, Einar Ö. Sveinbjörnsson, Ulrike Grossner, J. Peder Bergman, Lasse Vines, Jawad Ul-Hassan

Publikováno v: APL Materials, Vol 11, Iss 3, Pp 031107-031107-10 (2023)

One of the main challenges in realizing 4H–SiC (silicon carbide)-based bipolar devices is the improvement of minority carrier lifetime in as-grown epitaxial layers. Although Z1/2 has been identified as the dominant carrier lifetime limiting defect,

Externí odkaz: https://doaj.org/article/669257e4429c4e43ad36d1841f6fec1d

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