Zobrazeno 1 - 10
of 252
pro vyhledávání: '"Eimori, T."'
Publikováno v:
In Microelectronic Engineering 2007 84(9):2201-2204
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B August 2005 237(1-2):72-76
Autor:
Ueno, S., Eimori, T., Kuroiwa, T., Furuta, H., Tsuchimoto, J., Maejima, S., Iida, S., Ohshita, H., Hasegawa, S., Hirano, S., Yamaguchi, T., Kurisu, H., Yutani, A., Hashikawa, N., Maeda, H., Ogawa, Y., Kawabata, K., Okumura, Y., Tsuji, T., Ohtani, J.
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p579-582, 4p
Autor:
Eimori, T., Oashi, T., Kimura, H., Yamaguchi, Y., Iwamatsu, T., Tsuruda, T., Suma, M., Hidaka, H., Inoue, Y., Nishimura, T., Satoh, S., Miyoshi, H.
Publikováno v:
Proceedings of IEEE International Electron Devices Meeting; 1993, p45-48, 4p
Autor:
Oashi, T., Eimori, T., Morishita, F., Iwamatsu, T., Yamaguchi, Y., Okuda, F., Shimomura, K., Shimano, H., Sakashita, N., Arimoto, K., Inoue, Y., Komori, S., Inuishi, M., Nishimura, T., Miyoshi, H.
Publikováno v:
International Electron Devices Meeting Technical Digest; 1996, p609-612, 4p
Autor:
Shimomura, K., Shimano, H., Sakashita, N., Okuda, F., Oashi, T., Yamaguchi, Y., Eimori, T., Inuishi, M., Arimoto, K., Maegawa, S., Inoue, Y., Komori, S., Kyuma, K.
Publikováno v:
IEEE Journal of Solid-State Circuits; 1997, Vol. 32 Issue 11, p1712-1720, 9p
Autor:
Suma, K., Tsuruda, T., Hidaka, H., Eimori, T., Oashi, T., Yamaguchi, Y., Iwamatsu, T., Hirose, M., Morishita, F., Arimoto, K., Fujishima, K., Inoue, Y., Nishimura, T., Yoshihara, T.
Publikováno v:
IEEE Journal of Solid-State Circuits; 1994, Vol. 29 Issue 11, p1323-1329, 7p
Autor:
Sato, M., Umezawa, N., Shimokawa, J., Arimura, H., Sugino, S., Tachibana, A., Nakamura, M., Mise, N., Kamiyama, S., Morooka, T., Eimori, T., Shiraishi, K., Yamabe, K., Watanabe, H., Yamada, K., Aoyama, T., Nabatame, T., Nara, Y., Ohji, Y.
Publikováno v:
2008 IEEE International Electron Devices Meeting; 2008, p1-4, 4p
Publikováno v:
2008 International Conference on Simulation of Semiconductor Processes & Devices; 2008, p33-36, 4p
Autor:
Mise, N., Morooka, T., Eimori, T., Kamiyama, S., Murayama, K., Sato, M., Ono, T., Nara, Y., Ohji, Y.
Publikováno v:
2007 IEEE International Electron Devices Meeting; 2007, p527-530, 4p