Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Eiji Natori"'
We applied uniform in-plane tensile stress on PZTN ferroelectric thin films of 130 nm in thickness, using a four-point bending test rig and measured the corresponding changes in polarization and leakage current. An initial polarization hysteresis loo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d520dad26d32aeb3bcaf261a130ef1c
https://doi.org/10.1080/10584580701756532
https://doi.org/10.1080/10584580701756532
Publikováno v:
Ferroelectrics. 301:49-53
We have studied the nature of the covalent bond between Pb 6p and O 2p orbitals in perovskites based on first-principles calculations with Berry phase theory. We compared the electric polarization and Young's modulus between PbTiO3 and BaTiO3. We fou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e9e5b0bf520105c057dbf9725a06ac4
https://doi.org/10.1080/00150190490454873
https://doi.org/10.1080/00150190490454873
Publikováno v:
Integrated Ferroelectrics. 52:137-145
A high-pressure annealing was applied to a post-annealing process for sol-gel derived PZT thin films. The squareness of D-E hysteresis curves changes depending on both total pressure and oxygen concentration. Moreover, the change follows the product
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fa5bb114b2be16b03829fd639860daa
https://doi.org/10.1080/10584580390254367
https://doi.org/10.1080/10584580390254367
Publikováno v:
Integrated Ferroelectrics. 52:137-145
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::319c8652dff900d21e63174da5e3bdbe
https://doi.org/10.1080/743845164
https://doi.org/10.1080/743845164
Autor:
Myungho Lim, Koji Ohashi, Carlos A. Paz de Araujo, Vikram Joshi, Koichi Oguchi, Eiji Natori, Junichi Karasawa, Jolanta Celinska, Nararyan Solayappan, Tatsuya Shimoda, Yasuaki Hamada, Larry D. McMillan
Publikováno v:
Integrated Ferroelectrics. 48:193-202
In order to reduce the thermal budget for SBT crystallization process in planer type stack cell FeRAMs, Rapid Thermal Anneal (RTA) based process for SBT thin film was investigated. Our new process is characterized by crystallization in RTA without an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20cb5b5b085eb652ffd72c7fcd3c50bb
https://doi.org/10.1080/10584580215452
https://doi.org/10.1080/10584580215452
Autor:
Koji Ohashi, Junichi Karasawa, Koichi Oguchi, Tatsuya Shimoda, Carlos A. Paz de Araujo, Eiji Natori, Larry D. McMillan, Yasuaki Hamada, Vikram Joshi
Publikováno v:
Integrated Ferroelectrics. 39:199-214
Various attempts to improve the microstructure of SBT thin films were carried out. One was to employ ultra-thin BT film as a top layer on the conventional SBT thin film. After optimization of the BT top layer thickness, a very smooth SBT surface was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43b43f8037ba959b65e17b88f13a2f7f
https://doi.org/10.1080/10584580108011943
https://doi.org/10.1080/10584580108011943
Autor:
Hiromu Miyazawa, Takeshi Kijima, Koji Ohashi, Eiji Natori, N. Furuya, Masao Nakayama, Taku Aoyama, K. Tanaka, Yasuaki Hamada, Tatsuya Shimoda, Akihito Matsumoto
Publikováno v:
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics.
We have succeeded in fabricating Pb(Zr,Ti,Nb)O3 (PZTN) thin films with 20-atomic% Nb at B site in ABO3 structure, which was suitable for high density and reliable ferroelectric random access memory (FeRAM). A sol-gel spin-coating method was used to p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::801bec67167326ef6bd79f55910f1746
https://doi.org/10.1109/isaf.2007.4393155
https://doi.org/10.1109/isaf.2007.4393155
Autor:
Yasuaki Hamada, Tatsuya Shimoda, Eiji Natori, Tamio Oguchi, Takamitsu Higuchi, Takeshi Kijima, Masato Yoshiya, Hiromu Miyazawa
Publikováno v:
MRS Proceedings. 902
We have studied imprint mechanism of ferroelectric memory based on the oxygen-vacancy screening model. Interface charge density and offset bias for PZT resulted from the imprint were estimated as a function of effective depth for diffusion of oxygen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcae65ae26599c470d23811f9ce24a97
https://doi.org/10.1557/proc-0902-t10-43
https://doi.org/10.1557/proc-0902-t10-43
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da36a6538948c8978183f28e2a2d93aa
https://doi.org/10.7567/ssdm.2004.d-1-1
https://doi.org/10.7567/ssdm.2004.d-1-1
Autor:
Tamio Oguchi, Takeshi Kijima, Tatsuya Shimoda, Hiromu Miyazawa, Taku Aoyama, Takamitsu Higuchi, Eiji Natori
Publikováno v:
MRS Proceedings. 784
Using first principles calculations, we have investigated the electronic structure of Pb(ZrTiNb)O3 (PZTN), a system with a low leakage current and high reliability in thin films. We proposed that in PZTN, the oxygen vacancy is suppressed due to the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fe861127b651487a46c15b431aa1479
https://doi.org/10.1557/proc-784-c3.12
https://doi.org/10.1557/proc-784-c3.12