Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Eiji Mochizuki"'
Publikováno v:
Journal of the Society of Materials Science, Japan. 66:829-835
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 6:1139-1147
Power semiconductor devices for electric power conversion are operated at high temperatures and must exhibit high reliability. Therefore, high heat resistance and long fatigue lifetimes are necessary for the solder joints in these devices. In this pa
Autor:
Toshihiro KUSUNOKI, Eiji MOCHIZUKI
Publikováno v:
AIJ Journal of Technology and Design. 21:109-112
Publikováno v:
Journal of Smart Processing. 4:46-50
Publikováno v:
Transactions of The Japan Institute of Electronics Packaging. 8:8-17
Publikováno v:
Journal of The Japan Institute of Electronics Packaging. 17:464-468
Autor:
Eiji Mochizuki, Toshihiro Kusunoki
Publikováno v:
AIJ Journal of Technology and Design. 20:933-938
Autor:
Hiroaki Hokazono, Akira Morozumi, Yoshitaka Nishimura, Yoshikazu Takahashi, Eiji Mochizuki, Yoshiharu Kariya
Publikováno v:
2016 International Conference on Electronics Packaging (ICEP).
Power semiconductor devices for electric power conversion must be highly efficient, compact, and with large capacity. Therefore, highly thermo stability and long fatigue lifetime are necessary for the joint materials of these devices. In this paper,
Autor:
Yasuhiko Inoue, Atsumichi Kushibe, Eiji Mochizuki, Toshihiro Kusunoki, Kurihara Takaaki, Hideo Kyuke
Publikováno v:
AIJ Journal of Technology and Design. 18:153-158
In order to evaluate the dynamic characteristics (natural period, equivalent viscous damping ratio, etc.) of traditional wooden frames, full-scale shaking table tests were performed. In these tests, the following types of specimens were included; 1)
Autor:
Tatsuo Nishizawa, Eiji Mochizuki, Tomoaki Goto, Yoshikazu Takahashi, Shinobu Hashimoto, Yoshitaka Nishimura
Publikováno v:
Transactions of The Japan Institute of Electronics Packaging. 1:40-47
This paper describes the design considerations for a high electric power density IGBT module structure mounted with smaller, new-generation chips. We have investigated heat flow depending on the copper foil thickness of an alumina based direct-copper