Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Eiichi Soda"'
Autor:
Eiichi Soda, Aiko Sato, Seiichi Kondo, Hiroto Ohtake, Seiji Samukawa, Yoshinari Ichihashi, Shuichi Saito
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:875-880
The feasibility of etching Cu/low-k interconnects by using a low global warming potential CF3I plasma was studied. Low-damage etching was done and porous SiOC (p-SiOC, k
Autor:
Kazuyuki Matsumaro, Hiroshi Yamashita, Hiroshi Sakaue, Eiichi Soda, Yoshihisa Matsubara, Fumihiro Koba, Nobuyuki Iriki, Takashi Ishigami, Tadayoshi Watanabe, Kaoru Koike, Hiroshi Arimoto
Publikováno v:
Japanese Journal of Applied Physics. 45:5418-5422
In this paper we showed electron projection lithography (EPL) applicability to via formation in a back-end-of-line (BEOL) process for 45-nm technology node through fabricating a two-layer metallization device. We developed a single-layer via-resist p
Autor:
Yoshihisa Matsubara, Takashi Nasuno, Wataru Wakamiya, Eiichi Soda, N. Kobayashi, Akiyuki Minami, Hiroshi Tsuda, Hiromasa Kobayashi, Koichiro Tsujita
Publikováno v:
IEICE Transactions on Electronics. :796-803
A novel via chain structure for failure analysis at 65 nm-node fixing OPC using inner and outer via chain dummy patterns has been proposed. The inner dummy is necessary to localize failure site in 200 nm pitch via chain using an optical beam induced
Publikováno v:
Macromolecular Symposia. 105:191-197
A polymer membrane containing N,N-disalicylidenethylenediaminocobalt (Co(salen)) was prepared. The Co(salen) supported in the polymer not only worked as a reversible and specific oxygen-adsorbent but discontinuously bound oxygen at the atmospheric ox
Autor:
Yukiyasu Arisawa, Noriaki Oda, Ichiro Mori, Shunko Magoshi, Yuusuke Tanaka, Naofumi Nakamura, Kentaro Matsunaga, Daisuke Kawamura, Kazuo Tawarayama, Shuichi Saito, Hiroyuki Tanaka, Hajime Aoyama, Takashi Kamo, Taiga Uno, Eiichi Soda
Publikováno v:
SPIE Proceedings.
In the fabrication of interconnect test chips with a half pitch of 35 nm, we used an EUV full-field scanner (EUV1) for three critical layers: Metal 1, Via 1 and Metal 2. In this study, we focused on the Via-1 layer and investigated the printing chara
Autor:
Yukiyasu Arisawa, Noriaki Oda, Kazuo Tawarayama, Ichiro Mori, Takashi Kamo, Daisuke Kawamura, Hiroyuki Tanaka, Kentaro Matsunaga, Yuusuke Tanaka, Toshihiko Tanaka, Hajime Aoyama, Taiga Uno, Naofumi Nakamura, Eiichi Soda, Shuichi Saito
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) is moving into the phase of the evaluation of integration for device fabrication. This paper describes its applicability to the fabrication of back-end-of-line (BEOL) test chips with a feature size of hp 35 nm,
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Publikováno v:
Advances in Resist Materials and Processing Technology XXVI.
Test chip manufacturing is an ongoing program at Selete in order to evaluate all elements of extreme ultraviolet lithography (EUVL) such as mask, source, exposure tool, flare compensation, resist material, and pattern transfer processes. One such tes
Autor:
Hiroshi Arimoto, Naoki Yamashita, Tadayoshi Watanabe, Fumihiro Koba, Yoshihisa Matsubara, Daisuke Kawana, Seiichi Tagawa, Eiichi Soda, Mitsuru Sato, Kazuyuki Matsumaro, Yasushi Fujii, Takahiro Kozawa, Tasuku Matsumiya, Katsumi Ohmori
Publikováno v:
SPIE Proceedings.
In this study, we have demonstrated a resist process to fabricate sub 45-nm lines and spaces (L&S) patterns (1:1) by using electron projection lithography (EPL) for a back-end-of-line (BEOL) process for 45-nm technology node. As a starting point we t
Publikováno v:
Journal of Materials Chemistry. 7:2151-2153
A disk (e.g. diameter 2 cm×2 mm) was made of [N,N′-bis(salicylidene)ethylenediamine]cobalt [Co(salen)] and carbon powder. The composite disk selectively absorbed oxygen from air, e.g. 22 cm3 oxygen per gram of composite at room temperature, which