Zobrazeno 1 - 10
of 899
pro vyhledávání: '"Eickhoff, M"'
Autor:
McCandless, J. P., Rowe, D., Pieczulewski, N., Protasenko, V., Alonso-Orts, M., Williams, M. S., Eickhoff, M., Xing, H. G., Muller, D. A., Jena, D., Vogt, P.
We report the growth of $\alpha-Ga_2O_3$ on $m$-plane $Al_2O_3$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth-rate-diagram for $\alpha-Ga_2O_3$ (10-10), and o
Externí odkaz:
http://arxiv.org/abs/2301.13053
Akademický článek
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Autor:
Schowalter Marco, Raghuvansy S., Karg A., Vogt P., Schlom D., Jena D., Eickhoff M., Rosenauer A.
Publikováno v:
BIO Web of Conferences, Vol 129, p 24042 (2024)
Externí odkaz:
https://doaj.org/article/aa4f7526c1ac47c291d6e6da7c0c0cd3
Autor:
Schlichting, S., Hönig, G. M. O., Müßener, J., Hille, P., Grieb, T., Teubert, J., Schörmann, J., Wagner, M. R., Rosenauer, A., Eickhoff, M., Hoffmann, A., Callsen, G.
Recently, we suggested an unconventional approach [the so-called Internal-Field-Guarded-Active-Region Design (IFGARD)] for the elimination of the crystal polarization field induced quantum confined Stark effect (QCSE) in polar semiconductor heterostr
Externí odkaz:
http://arxiv.org/abs/1707.06882
Autor:
Ajay, A., Schörmann, J., Jimenez-Rodriguez, M., Lim, C. B., Walther, F., Rohnke, M., Mouton, I., Amichi, L., Bougerol, C., Hertog, M. I. Den, Eickhoff, M., Monroy, E.
Publikováno v:
Journal of Physics D: Applied Physics 49, 445301 (2016)
We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular beam epitaxy, reaching carrier concentrations of up to 6.7E20 cm-3 at 300K, well beyond the Mott density. The Ge concentration and free carrier
Externí odkaz:
http://arxiv.org/abs/1604.00231
Autor:
Lim, C. B., Ajay, A., Bougerol, C., Haas, B., Schörmann, J., Beeler, M., Lähnemann, J., Eickhoff, M., Monroy, E.
Publikováno v:
Nanotechnology 26, 435201 (2015)
This paper assesses intersubband transitions in the 1 to 10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN substrates. The quantum wells were designed to contain two confined elect
Externí odkaz:
http://arxiv.org/abs/1506.00353
Autor:
Beeler, M., Lim, C. B., Hille, P., Bleuse, J., Schörmann, J., de la Mata, M., Arbiol, J., Eickhoff, M., Monroy, E.
Publikováno v:
Phys. Rev. B 91, 205440 (2015)
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude.
Externí odkaz:
http://arxiv.org/abs/1412.7720
Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by Germanium doping
Autor:
Hille, P., Müßener, J., Becker, P., de la Mata, M., Rosemann, N., Magén, C., Arbiol, J., Teubert, J., Chatterjee, S., Schörmann, J., Eickhoff, M.
Publikováno v:
Appl. Phys. Lett. 104, 102104 (2014)
We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with Germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of Germanium at concentrations above $10^{2
Externí odkaz:
http://arxiv.org/abs/1402.3081
Autor:
Karg, A., Kracht, M., Vogt, P., Messow, A., Braud, N., Schörmann, J., Rohnke, M., Janek, J., Falta, J., Eickhoff, M.
Publikováno v:
Journal of Applied Physics; 11/21/2022, Vol. 132 Issue 19, p1-9, 9p
Autor:
Furtmayr, F., Teubert, J., Becker, P., Conesa-Boj, S., Morante, J. R., Arbiol, J., Chernikov, A., Schäfer, S., Chatterjee, S., Eickhoff, M.
Publikováno v:
Phys. Rev. B 84, 205303 (2011)
The three dimensional carrier confinement in GaN nanodiscs embedded in GaN/AlGaN nanowires and its effect on their photoluminescence properties is analyzed for Al concentrations between x = 0.08 and 1. Structural analysis by high resolution transmiss
Externí odkaz:
http://arxiv.org/abs/1109.3394