Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Egziabher, AG"'
Publikováno v:
Zede Journal; Vol 20 (2003); 23-25
This paper proposes optical NOT. AND, and NOR gates using unijunction transistor (UJT), light emitting diode (LED), and light dependent resistor (LDR). Efforts are made to extend the development of these gates using LDR, LED, and UJT to work at 1.8V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=78975075580c::38b49d5ef1c3f7f124bd0c22fbc450b9
https://www.ajol.info/index.php/zj/article/view/123940
https://www.ajol.info/index.php/zj/article/view/123940
Autor:
Abay ST; Center for Population and Development, Institute of Population Studies, Mekelle University, P.O. Box 231, Mekelle, Ethiopia. shishaymu2014@gmail.com., Gebre-Egziabher AG; Center for Population and Development, Institute of Population Studies, Mekelle University, Mekelle, Ethiopia.
Publikováno v:
BMC international health and human rights [BMC Int Health Hum Rights] 2020 Jul 29; Vol. 20 (1), pp. 20. Date of Electronic Publication: 2020 Jul 29.