Zobrazeno 1 - 10
of 344
pro vyhledávání: '"Egorov, A.Yu"'
Autor:
Makhov, I.S., Kryzhanovskaya, N.V., Dragunova, A.S., Masyutin, D.A., Gladyshev, A.G., Babichev, A.V., Andryushkin, V.V., Nevedomsky, V.N., Uvarov, A.V., Papylev, D.S., Kolodeznyi, E.S., Novikov, I.I., Karachinsky, L.Ya, Egorov, A.Yu, Zhukov, A.E.
Publikováno v:
In Journal of Luminescence December 2024 276
Autor:
Kalevich, V.K., Shiryaev, A.Yu., Ivchenko, E.L., Afanasiev, M.M., Egorov, A.Yu., Ustinov, V.M., Masumoto, Y.
Publikováno v:
In Physica B: Physics of Condensed Matter 15 December 2009 404(23-24):4929-4932
Autor:
null Egorov A.Yu., null Zhukov A.E., null Kryzhanovskaya N. V., null Denisov D.V., null Shernyakov Yu. M., null Karachinsky L. Ya., null Babichev A. V., null Andryushkin V. V., null Gladyshev A. G., null Nyapshaev I.A., null NovikovI.I.
Publikováno v:
Semiconductors. 56:712
The influence of InGaAlAs waveguide composition on the photoluminescence and electroluminescence of 1550 nm spectral range heterostructures based on thin strained In0.74Ga0.26As quantum wells has been studied. An approach is proposed that allows base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae9861ccbbf1bf35c02104f6335b60e8
https://doi.org/10.21883/sc.2022.09.54140.9892
https://doi.org/10.21883/sc.2022.09.54140.9892
Autor:
null Sokolovskii G.S., null Egorov A.Yu., null Pikhtin N. A., null Novikov I.I., null Karachinsky L.Ya., null Evtikhiev V. P., null Dudelev V. V., null Lyutetskii A. V., null Slipchenko S.O., null Denisov D. V., null Mitrofanov M. И., null Voznyuk G. V., null Gladyshev A. G., null Kolodeznyi E.S., null Chistyakov D. V., null Mikhailov D. A., null Babichev A.V.
Publikováno v:
Semiconductors. 56:436
The results of studies of ring quantum-cascade lasers with surface emission due to a second-order grating formed in the top cladding layers are presented. Surface emission near 7.85 μm with a low threshold current density (3.8 kA/cm2), in comparison
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d94b1735ef51ce51a86b3ec846d6baf6
https://doi.org/10.21883/sc.2022.06.53547.9825
https://doi.org/10.21883/sc.2022.06.53547.9825
Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures
Autor:
Egorov, A.Yu., Odnobludov, V.A. *, Mamutin, V.V., Zhukov, A.E., Tsatsul’nikov, A.F., Kryzhanovskaya, N.V., Ustinov, V.M., Hong, Y.G., Tu, C.W.
Publikováno v:
In Journal of Crystal Growth 2003 251(1):417-421
Publikováno v:
In Physica B: Physics of Condensed Matter 2001 308:877-880
Publikováno v:
In Physica B: Physics of Condensed Matter 2001 302:282-290
Autor:
Egorov, A.Yu. *, Bernklau, D., Borchert, B., Illek, S., Livshits, D., Rucki, A., Schuster, M., Kaschner, A., Hoffmann, A., Dumitras, Gh., Amann, M.C., Riechert, H.
Publikováno v:
In Journal of Crystal Growth 2001 227:545-552
Autor:
Heitz, R *, Ledentsov, N.N, Bimberg, D, Egorov, A.Yu, Maximov, M.V, Ustinov, V.M, Zhukov, A.E, Alferov, Zh.I, Cirlin, G.E, Soshnikov, I.P, Zakharov, N.D, Werner, P, Gösele, U
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures May 2000 7(3-4):317-321
Autor:
Ambrajei, A.N., Clendenin, J.E., Egorov, A.Yu., Mamaev, Yu.A. *, Maruyama, T., Mulhollan, G.A., Subashiev, A.V., Yashin, Yu.P., Ustinov, V.M., Zhukov, A.E.
Publikováno v:
In Applied Surface Science 2000 166(1):40-44