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Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

Autor: Efthymiou, L, Longobardi, GCG, Udrea, F, Lin, E, Chien, T, Chen, M

Similarly to the unipolar SiC Schottky diodes, AlGaN/GaN Schottky devices have been suggested to have a negligible reverse recovery current during turn-off and can therefore be switched at very high frequencies with low power losses [1-2]. This study

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8d457e9045f60bc72a1a27f78b593003

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On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs

Autor: Efthymiou, L, Camuso, G, Longobardi, G, Chien, T, Chen, M, Udrea, F

Publikováno v: Energies; Volume 10; Issue 3; Pages: 407

© 2017 by the author. With Gallium Nitride (GaN) device technology for power electronics applications being ramped up for volume production, an increasing amount of research is now focused on the performance of GaN power devices in circuits. In this

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0550035244b136abd95cf4a3a70e2e5

Matching Cash and Kind: Argentina’s Experimentation with Multiple Currencies, 1995–2005

Autor: Gomez, Georgina, Batiz-Lazo, B., Efthymiou, L.

Publikováno v: The Book of Payments. Historical and Contemporary Views on the Cashless Society, 65-74
STARTPAGE=65;ENDPAGE=74;TITLE=The Book of Payments. Historical and Contemporary Views on the Cashless Society
The Book of Payments ISBN: 9781137602305

Most economies nowadays operate on the basis of one currency per country, although that is a relative novelty in historical terms. Around the turn of the millennium, Argentina also had several currencies that coexisted at a national, regional and com

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db1c381291202571162a887d908a7f19
https://pure.eur.nl/en/publications/51e1ffb1-deac-40fa-9a1e-531f9125e6ad