Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Efstratia N. Sgourou"'
Autor:
Stavros-Richard G. Christopoulos, Efstratia N. Sgourou, Alexander Chroneos, Charalampos A. Londos
Publikováno v:
Applied Sciences, Vol 14, Iss 10, p 4194 (2024)
Carbon (C) is an important isovalent impurity in silicon (Si) that is inadvertently added in the lattice during growth. Germanium (Ge), tin (Sn), and lead (Pb) are isovalent atoms that are added in Si to improve its radiation hardness, which is impor
Externí odkaz:
https://doaj.org/article/23c69f467c56464bb7325f47f6a5d7ad
Autor:
Efstratia N. Sgourou, Aspassia Daskalopulu, Lefteri H. Tsoukalas, Ioannis L. Goulatis, Ruslan V. Vovk, Alexander Chroneos
Publikováno v:
Applied Sciences, Vol 13, Iss 17, p 9619 (2023)
There is a technological necessity for more efficient, abundant, and sustainable materials for energy storage applications. Lithium-ion batteries dominate, however, there are a number of sustainability, economic, and availability issues that require
Externí odkaz:
https://doaj.org/article/10f0075be40449a199fd720b4549053e
Autor:
Efstratia N. Sgourou, Aspassia Daskalopulu, Lefteri H. Tsoukalas, George Stamoulis, Ruslan V. Vovk, Alexander Chroneos
Publikováno v:
Applied Sciences, Vol 12, Iss 23, p 11993 (2022)
The advent of the point-contact transistor is one of the most significant technological achievements in human history with a profound impact on human civilization during the past 75 years. Although the first transistor was made of germanium it was so
Externí odkaz:
https://doaj.org/article/74edc646b50e44199f71b604f00b6792
Autor:
Efstratia N. Sgourou, Aspassia Daskalopulu, Ioannis Goulatis, Yerassimos Panayiotatos, Andrei L. Solovjov, Ruslan V. Vovk, Alexander Chroneos
Publikováno v:
Applied Sciences, Vol 12, Iss 19, p 9872 (2022)
The technological requirement for ever more efficient materials for the energy and electronics sectors has led to the consideration of numerous compositionally and structurally complicated systems. These systems include solid solutions that are diffi
Externí odkaz:
https://doaj.org/article/6ce2c486e4ed4777bfc004a6d19ab344
Autor:
Charalampos A. Londos, Alexander Chroneos, Efstratia N. Sgourou, Ioannis Panagiotidis, Theoharis Angeletos, Marianna S. Potsidi
Publikováno v:
Applied Sciences, Vol 12, Iss 16, p 8151 (2022)
Crystalline silicon (Si) is the key material of the semiconductor industry, with significant applications for electronic and microelectronic devices. The properties of Si are affected by impurities and defects introduced into the material either duri
Externí odkaz:
https://doaj.org/article/4aa3d746984347aead5afa4ff422fd6b
Autor:
Efstratia N. Sgourou, Yerasimos Panayiotatos, Konstantinos Davazoglou, Andrei L. Solovjov, Ruslan V. Vovk, Alexander Chroneos
Publikováno v:
Applied Sciences, Vol 10, Iss 7, p 2286 (2020)
Perovskite and perovskite related oxides are important materials with applications ranging from solid oxide fuel cells, electronics, batteries and high temperature superconductors. The investigation of physical properties at the atomic scale such as
Externí odkaz:
https://doaj.org/article/64e726256c684135a1d54cf01cb23654
Publikováno v:
Energies, Vol 12, Iss 7, p 1329 (2019)
Lithium manganite, Li2MnO3, is an attractive cathode material for rechargeable lithium ion batteries due to its large capacity, low cost and low toxicity. We employed well-established atomistic simulation techniques to examine defect processes, favou
Externí odkaz:
https://doaj.org/article/60c2c810a4de4f2285cb15cf2c5931c9
Publikováno v:
Applied Sciences, Vol 7, Iss 7, p 674 (2017)
The technological requirement to optimize materials for energy and electronic materials has led to the use of defect engineering strategies. These strategies take advantage of the impact of composition, disorder, structure, and mechanical strain on t
Externí odkaz:
https://doaj.org/article/26de7ed8ec2c4cff8966b854ce2f9bc4
Autor:
Hidenori Ohyama, Efstratia N. Sgourou, A. Andrianakis, Charalamos A. Londos, Andrzej Misiuk, Valentin V. Emtsev
Publikováno v:
Solid State Phenomena. :147-153
This paper reports experimental results on the production and annealing of oxygen-vacancy related (VOn, 1iOi, CiOiI, and CiCs) defects in Ge-doped Czochralski-grown silicon (Cz-Si) materials containing carbon. The samples were irradiated by 2 MeV fas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1a7e660e31757780862141e3a03a6ac
https://doi.org/10.4028/www.scientific.net/ssp.178-179.147
https://doi.org/10.4028/www.scientific.net/ssp.178-179.147
Autor:
Valentin V. Emtsev, Hidenori Ohyama, Charalamos A. Londos, D. Aliprantis, A. Andrianakis, Efstratia N. Sgourou
Publikováno v:
Solid State Phenomena. :187-192
We present infrared (IR) spectroscopy measurements on carbon-rich, germanium-doped Czochralski-grown (Cz-Si) subjected to irradiation with 2 MeV electrons. The study is focused on the effect of germanium doping on the production of carbon-related def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33931f87637d9e4b375dd213dcf165a9
https://doi.org/10.4028/www.scientific.net/ssp.156-158.187
https://doi.org/10.4028/www.scientific.net/ssp.156-158.187