Zobrazeno 1 - 10
of 91
pro vyhledávání: '"Efrain Altamirano"'
Autor:
Sebaai, Farid, Loo, Roger, Jourdain, Anne, Beyne, Eric, Kawarazaki, Hikaru, Nakano, Teppei, Sanchez, Efrain Altamirano
Publikováno v:
In Microelectronic Engineering 15 November 2024 294
Autor:
Vereecke, Guy, De Coster, Hanne, Dochain, Denis, Nurekeyeva, Kunsulu, Conlan, Shona, Nsimba, Anthony, Wostyn, Kurt, Sanchez, Efrain Altamirano
Publikováno v:
In Microelectronic Engineering 15 July 2023 279
Autor:
Sepulveda, Alfonso, Hellin, David, Zhang, Liping, Kenis, Karine, Batuk, Dmitry, Baudot, Sylvain, Briggs, Basoene, Sanchez, Efrain Altamirano, Mountsier, Tom, Barla, Kathy, Morin, Pierre
Publikováno v:
In Materials Science in Semiconductor Processing April 2022 141
Akademický článek
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Autor:
Antoine Pacco, Ju-Geng Lai, Pallavi Puttarame Gowda, Hanne De Coster, Jens Rip, Kurt Wostyn, Efrain Altamirano Sanchez
Publikováno v:
ECS Transactions. 108:175-183
Memory cells comprising a Phase Change Material (PCM) are the building blocks of fast and non-volatile memory devices called Phase Change Random Access Memory (PCRAM) [1-3]. The working principle of this memory involves data retention in the form of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b0bb01145f19757fdec600e98c56559
https://doi.org/10.1149/10804.0175ecst
https://doi.org/10.1149/10804.0175ecst
Publikováno v:
ECS Transactions. 108:167-173
As semiconductor devices continue to scale, it is important to evaluate new metals for narrower trench or via structures. Mo is a candidate because of its lower resistivity compared to the conventional metals, Cu or W. Mo is etched with wet chemistry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a13ecc26fe806199d36085a7275b16ab
https://doi.org/10.1149/10804.0167ecst
https://doi.org/10.1149/10804.0167ecst
Autor:
Quoc-Toan Le, Haci Guevenc, Ansar Ibrahim, Andreas Klipp, Stefan Decoster, Gayle Murdoch, Efrain Altamirano Sanchez
Publikováno v:
ECS Transactions. 108:39-44
Copper (Cu) has been used as the metal for interconnects for many years. Along with the continued scaling of semiconductor devices, especially beyond 10 nm nodes, alternative metals such as ruthenium (Ru) and molybdenum (Mo) have emerged as interesti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a92b13cabd38c021c3fb38a611ac936
https://doi.org/10.1149/10804.0039ecst
https://doi.org/10.1149/10804.0039ecst
Autor:
Yusuke Muraki, Yusuke Oniki, Pallavi P. Gowda, Efrain Altamirano-Sánchez, Hans Mertens, Naoto Horiguchi, Frank Holsteyns, Subhadeep Kal, Cheryl Alix, Kaushik Kumar, Aelan Mosden, Trace Hurd, Nobuyuki Takahashi
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cddf542bde2bd4b7a45bd858701f6c81
https://doi.org/10.1117/12.2613723
https://doi.org/10.1117/12.2613723