Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Efland, T."'
Publikováno v:
Proceedings ISPSD '05. the 17th International Symposium on Power Semiconductor Devices & ICs, 2005; 2005, p327-330, 4p
Publikováno v:
Proceedings ISPSD '05. the 17th International Symposium on Power Semiconductor Devices & ICs, 2005; 2005, p147-150, 4p
Publikováno v:
Proceedings of the 2004 Meeting Bipolar/BiCMOS Circuits & Technology, 2004; 2004, p160-163, 4p
Publikováno v:
Proceedings ISPSD '04. the 16th International Symposium on Power Semiconductor Devices & ICs, 2004; 2004, p419-422, 4p
Publikováno v:
Proceedings ISPSD '04. the 16th International Symposium on Power Semiconductor Devices & ICs, 2004; 2004, p159-162, 4p
Autor:
Neesgaard, C., Antley, R., Efland, T., Kaya, C., Mochizuki, K., Nyboe, F., Risbo, L., Skelton, D., Unnikirishnan, S., Zhao, A.
Publikováno v:
Proceedings ISPSD '04. the 16th International Symposium on Power Semiconductor Devices & ICs, 2004; 2004, p97-100, 4p
Publikováno v:
ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices & ICs, 2003; 2003, p257-260, 4p
Autor:
Grant, D., Briggs, D., Daniels, D., Efland, T., King, B., Ramani, R., Skelton, D., Tsai, C.Y., Tucker, J., Miftakhutdinov, R., Martinez, R.
Publikováno v:
Proceedings of the 14th International Symposium on Power Semiconductor Devices & Ics; 2002, p213-216, 4p
Optimization of low voltage n-channel LDMOS devices to achieve required electrical and lifetime SOA.
Publikováno v:
Proceedings of the 14th International Symposium on Power Semiconductor Devices & Ics; 2002, p261-264, 4p
Autor:
Merchant, S., Efland, T., Haynie, S., Headen, W., Kajiyama, K., Paiva, S., Shaw, R., Tachikake, I., Tani, T., Chin-Yu Tsai
Publikováno v:
Proceedings of the 14th International Symposium on Power Semiconductor Devices & Ics; 2002, p185-188, 4p