Zobrazeno 1 - 10
of 16 249
pro vyhledávání: '"Effective mass (solid-state physics)"'
Publikováno v:
Chinese Journal of Chemical Engineering. 51:100-108
An effective mass transfer intensification method was proposed by embedding different triangular obstacles to improve the gas–liquid mass transfer efficiency in microchannel. The influences of triangle obstacles configuration, obstacle interval and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b8a32e93d67af499034afcee3cb89e5
https://doi.org/10.1016/j.cjche.2021.09.016
https://doi.org/10.1016/j.cjche.2021.09.016
Autor:
Jianxin Zhang, Jun Luo, Juanjuan Xing, Hai Huang, Chen Lin, Jiong Yang, Wanyu Lyu, Ying Jiang, Kai Guo, Jiye Zhang, Shijing Li
Publikováno v:
Journal of Materiomics, Vol 8, Iss 2, Pp 302-310 (2022)
SrFBiS2 is a quaternary n-type semiconductor with rock-salt-type BiS2 and fluorite-type SrF layers alternately stacked along the c axis. The tunability of the crystal and electronic structures as well as the intrinsically low thermal conductivity mak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55073c8e21cf0e4fcc50b13db9e02737
https://doi.org/10.1016/j.jmat.2021.09.006
https://doi.org/10.1016/j.jmat.2021.09.006
Autor:
Nga Thi Do, Anh Tuan Thanh Pham, Dung Van Hoang, Jer-Lai Kuo, Thang Bach Phan, Nam Hoang Vu, Truong Huu Nguyen, Vinh Cao Tran
Publikováno v:
Journal of Materiomics. 8:123-135
This paper distinguished hydrogen roles to improve electron mobility and carrier concentration in ZnO and Al doped ZnO sputtered films. By combining experimental evidences and theoretical results, we find out that hydrogen located at oxygen vacancy s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f6efea2a94084c1bfe1ac668f76bfe2
https://doi.org/10.1016/j.jmat.2021.04.011
https://doi.org/10.1016/j.jmat.2021.04.011
Publikováno v:
IEEE Transactions on Power Electronics. 37:55-58
In this letter, we comprehensively investigate the electrical properties of the 1200 V planner-gate 4H-SiC power metal–oxide–semiconductor field-effect transistors under the mechanical strains. Three kinds of strains, including the biaxial strain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::486f7fc3946bcdf201ef39b9a12833a5
https://doi.org/10.1109/tpel.2021.3100565
https://doi.org/10.1109/tpel.2021.3100565
Publikováno v:
Materials Advances. 3:734-755
Thermoelectric materials have been extensively studied for applications in solid-state power generation and cooling. Progress has been made over the past decade in multiple materials systems, hence, it becomes increasingly valuable to be able to anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87a52d45b15e0f2bda3ff0887a7ff2c4
https://doi.org/10.1039/d1ma00780g
https://doi.org/10.1039/d1ma00780g
Publikováno v:
Materials Today: Proceedings. 49:1815-1821
The results of the calculation on magnetization (M) for diluted magnetic semiconductor Pb1-xEuxSe are reported. Our calculation includes two distinct contributions namely contribution from the localized magnetic impurity (Mi) and contribution from th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::758f0dae63f7abf0590f9da3646e9d89
https://doi.org/10.1016/j.matpr.2021.08.033
https://doi.org/10.1016/j.matpr.2021.08.033
Publikováno v:
Materials Today: Proceedings. 59:264-267
The study of valence fluctuation is made on TmSe compound from simulated theoretical x-ray powder diffraction data. The theoretical lattice parameter is in agreement with experimental parameter. The amount of charge transfer is deduced as 0.23ē whic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8114e3cd62e3a4e6c83c60e98974774d
https://doi.org/10.1016/j.matpr.2021.11.110
https://doi.org/10.1016/j.matpr.2021.11.110
Autor:
Bo Liu, Houjun Gong, Qing Shi, Ding Ren, Liwei Lin, Yiyuan Chen, Ran Ang, Yanping Huang, Juan Li, Xinyu Chen
Publikováno v:
ACS Applied Materials & Interfaces. 13:58781-58788
The lamellar structure of (Bi,Sb)2(Te,Se)3 alloys makes it difficult to achieve isotropic thermoelectric properties in the directions along and perpendicular to the c-axis, especially for n-type samples. In this work, by introducing Cu in polycrystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4b2ac8e49de6d4753493a019727cc2f
https://doi.org/10.1021/acsami.1c19668
https://doi.org/10.1021/acsami.1c19668
Publikováno v:
International Journal of Fracture. 232:199-212
As emerging artificial structures, elastic wave metamaterials can show some unique properties in special frequency regions. In this study, the elastic wave scattering by a pair of parallel semi-infinite cracks in mechanical metamaterials with local r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50c85965f24a200d16766196e572df33
https://doi.org/10.1007/s10704-021-00603-1
https://doi.org/10.1007/s10704-021-00603-1
Autor:
Dariush Madadi
Publikováno v:
Silicon. 14:7595-7602
In this paper, we present a solution for understanding volume depletion and essentially decreasing the leakage current of β-Ga2O3 junctionless FETs (βJL-FETs) by embedding the 4H-SiC layer into the BOX layer (βESJL-FET). Using the silvaco simulato
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b51853f7d98dc5372609de4b025baf8
https://doi.org/10.1007/s12633-021-01510-9
https://doi.org/10.1007/s12633-021-01510-9