Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Eenink, H. G. J."'
Autor:
Bavdaz, P. L., Eenink, H. G. J., van Staveren, J., Lodari, M., Almudever, C. G., Clarke, J. S., Sebastiano, F., Veldhorst, M., Scappucci, G.
We demonstrate a 36$\times$36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The crossbar
Externí odkaz:
http://arxiv.org/abs/2202.04482
Autor:
Petit, L., Russ, M., Eenink, H. G. J., Lawrie, W. I. L., Clarke, J. S., Vandersypen, L. M. K., Veldhorst, M.
Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate at temperatures exceeding one Kelvin. Q
Externí odkaz:
http://arxiv.org/abs/2007.09034
Autor:
Petit, L., Eenink, H. G. J., Russ, M., Lawrie, W. I. L., Hendrickx, N. W., Clarke, J. S., Vandersypen, L. M. K., Veldhorst, M.
Publikováno v:
Nature 580, 355-359 (2020)
Quantum computation requires many qubits that can be coherently controlled and coupled to each other. Qubits that are defined using lithographic techniques are often argued to be promising platforms for scalability, since they can be implemented usin
Externí odkaz:
http://arxiv.org/abs/1910.05289
Autor:
Lawrie, W. I. L., Eenink, H. G. J., Hendrickx, N. W., Boter, J. M., Petit, L., Amitonov, S. V., Lodari, M., Wuetz, B. Paquelet, Volk, C., Philips, S., Droulers, G., Kalhor, N., van Riggelen, F., Brousse, D., Sammak, A., Vandersypen, L. M. K., Scappucci, G., Veldhorst, M.
Publikováno v:
Appl. Phys. Lett. 116, 080501 (2020)
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating th
Externí odkaz:
http://arxiv.org/abs/1909.06575
Tunable coupling and isolation of single electrons in silicon metal-oxide-semiconductor quantum dots
Autor:
Eenink, H. G. J., Petit, L., Lawrie, W. I. L., Clarke, J. S., Vandersypen, L. M. K., Veldhorst, M.
Publikováno v:
Nano Letters 19 (12), 8653-8657 (2019)
Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite t
Externí odkaz:
http://arxiv.org/abs/1907.08523
Autor:
Sabbagh, D., Thomas, N., Torres, J., Pillarisetty, R., Amin, P., George, H. C., Singh, K., Budrevich, A., Robinson, M., Merrill, D., Ross, L., Roberts, J., Lampert, L., Massa, L., Amitonov, S., Boter, J., Droulers, G., Eenink, H. G. J., van Hezel, M., Donelson, D., Veldhorst, M., Vandersypen, L. M. K., Clarke, J. S., Scappucci, G.
Publikováno v:
Phys. Rev. Applied 12, 014013 (2019)
We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99
Externí odkaz:
http://arxiv.org/abs/1810.06521
Autor:
Petit, L., Boter, J. M., Eenink, H. G. J., Droulers, G., Tagliaferri, M. L. V., Li, R., Franke, D. P., Singh, K. J., Clarke, J. S., Schouten, R. N., Dobrovitski, V. V., Vandersypen, L. M. K., Veldhorst, M.
Publikováno v:
Phys. Rev. Lett. 121, 076801 (2018)
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson no
Externí odkaz:
http://arxiv.org/abs/1803.01774
Publikováno v:
Nature Communications 8, 1766 (2017)
Recent advances in quantum error correction (QEC) codes for fault-tolerant quantum computing \cite{Terhal2015} and physical realizations of high-fidelity qubits in a broad range of platforms \cite{Kok2007, Brown2011, Barends2014, Waldherr2014, Dolde2
Externí odkaz:
http://arxiv.org/abs/1609.09700
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Akademický článek
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