Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Edwin X. Li"'
Publikováno v:
IEEE Journal of Solid-State Circuits. 30:872-880
A GaAs MESFET model is presented that addresses the modeling problem arising from the discrepancy between the derivatives of the dc current and the measured small signal parameters of a GaAs MESFET. This discrepancy traditionally required the user of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fd6739313e776087f51789b7c03a4c3
https://doi.org/10.1109/4.400429
https://doi.org/10.1109/4.400429
Autor:
Malcolm MacIntosh, Ed Chien, Dandan Li, C.P. Lee, Vikram Magoon, Yuyu Chang, Shahla Khorram, Bojko Marholev, Kevin Chien, Stephen Au, Zhenhua Liu, Amir Hadji-Abdolhamid, Paul Chang, Jesse Castaneda, Jacob Rael, Vinay Chandrasekhar, Keith Carter, Ali Afsahi, Edwin X. Li, Mark Gonikberg, Maryam Rofougaran, Ali Sarfaraz, Reza Rofougaran, Kimmer Kim, Yury Gonikberg, Tom Li, Siukai Mak, S. Bouras, Dayo Ojo, Seema B. Anand, Luis Gutierrez, Lijun Zhang, Bobby Lee, Madjid Hafizi, Carol Barrett, M. Nariman, Alireza Zolfaghari, Kishore Rama Rao, Marcellus Forbes, Arya Behzad, Brima Ibrahim, Zhimin Zhao, Subhas Bothra, Steve Wu, Rozi Roufoogaran, Iqbal Bhatti, Colin Fraser, Hooman Darabi, Prasad Seetharam
Publikováno v:
ISSCC
The growing occurrences of WLAN, BT, and FM on the same mobile device have created a demand for putting all three on the same die to save on die size, I/O count, BOM, and ultimately cost. Common blocks such as crystal oscillator, bandgap, and power m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2320dc5d8a3e7c33269e30c34b128f2
https://doi.org/10.1109/isscc.2010.5433962
https://doi.org/10.1109/isscc.2010.5433962