Zobrazeno 1 - 10
of 176
pro vyhledávání: '"Edwin Roks"'
Publikováno v:
Business Wire (English). 10/24/2023.
Publikováno v:
Business Wire (English). 06/16/2015.
Publikováno v:
IEEE Transactions on Electron Devices. 49:370-376
For pt. I see ibid., vol. 49, no. 3, p. 361-69 (2002). This paper characterizes the performance of four sensors from the bouwblok family. The original design meets the key original design goals, including the maximum packet size Q/sub max/, readout s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd7624793f1be292830fbf827ffcbe49
https://doi.org/10.1109/16.987105
https://doi.org/10.1109/16.987105
Publikováno v:
IEEE Transactions on Electron Devices. 43:273-281
A new class of Frame-Transfer CCD image sensors is presented, which is based on the use of both electrons and holes as information carriers and has a novel cross-antiblooming structure for overexposure protection. The device consists of alternate col
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cebab942e3088d06432ab0b689d882e
https://doi.org/10.1109/16.481728
https://doi.org/10.1109/16.481728
Publikováno v:
IEEE Transactions on Electron Devices. 43:1583-1591
A new high speed, low noise, nondestructive charge detector, called the Double-Sided Floating-Surface Detector (DS-FSD), which is fabricated in a standard CCD image sensor process, is reported. This detector can be integrated in CCD image sensors and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d37471c4b93103c75a334aafe8111bf4
https://doi.org/10.1109/16.535352
https://doi.org/10.1109/16.535352
Publikováno v:
IEEE Transactions on Electron Devices. 42:1449-1460
A Frame-Transfer CCD imager for consumer applications has been developed with low dark current by using hole accumulation at the entire Si-SiO/sub 2/ interface of the image pixel during integration, called "All-Gates Pinning", or AGP. All sensor feat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16d5eaabbca72a67f4d8d9cfbcb99aac
https://doi.org/10.1109/16.398659
https://doi.org/10.1109/16.398659
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
The importance of holes in solid-state image sensors is described. Today's success of digital imaging is based on the positive effect of an accumulation layer that reduces the interface-related dark current and dark current fixed-pattern noise. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91071426abcd6689413bae17c5127d75
https://doi.org/10.1109/iedm.2005.1609476
https://doi.org/10.1109/iedm.2005.1609476
Autor:
Hermanus Leonardus Peek, Edwin Roks, J.M. Van der Beyden, Jan T. Bosiers, Yvonne Astrid Boersma
Publikováno v:
Proceedings of 1994 IEEE International Electron Devices Meeting.
A VGA-compatible 1/4" true progressive scan 640(H)/spl times/480(V) FT-CCD imager with 5.1/spl times/5.1 /spl mu/m/sup 2/ pixels designed for compact, low-power multimedia applications, is presented. To obtain high charge storage in this very small p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79e478a26cdc51a0306bf3ebb8a41fd7
https://doi.org/10.1109/iedm.1994.383289
https://doi.org/10.1109/iedm.1994.383289
Autor:
Olasolo, Héctor1,2 hector.olasolo@urosario.edu.co, Galain Palermo, Pablo3,4 pablo.galain@unab.cl
Publikováno v:
Política Criminal: Revista Electrónica Semestral de Políticas Públicas en Materias Penales. jul2024, Vol. 18 Issue 37, p129-161. 33p.
Autor:
Willem Hoekstra, Bart G. M. Dillen, Jan Van Dijk, Holger Stoldt, Herman L. Peek, Rik H. S. de Gruijter, A.C. Kleimann, Chris J. Schaeffer, Peter C. J. van de Rijt, Edwin Roks
Publikováno v:
SPIE Proceedings.
A 1k X 1k frame transfer progressive scan imager was developed, based on a 1k X 1k interlaced frame transfer imager, the FT12. The sensors are designed for 2/3' optical format. They have a high resolution (1024 X 1024 pixels), overexposure handling b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e1dae9aa0b2b99d1d7a252d35b3340b
https://doi.org/10.1117/12.208374
https://doi.org/10.1117/12.208374