Zobrazeno 1 - 10
of 127
pro vyhledávání: '"Edwin L. Piner"'
Autor:
Anupam K.C., Anwar Siddique, Jonathan Anderson, Rony Saha, Chhabindra Gautam, Anival Ayala, Chris Engdahl, Mark W. Holtz, Edwin L. Piner
Publikováno v:
SN Applied Sciences, Vol 4, Iss 8, Pp 1-16 (2022)
Abstract A multistep deposition technique is developed to produce highly oriented diamond films by hot filament chemical vapor deposition (HFCVD) on Si (111) substrates. The orientation is produced by use of a thin, 5–20 nm, Ni interlayer. Annealin
Externí odkaz:
https://doaj.org/article/e10316370748467cac1ebe7c7a9641a6
Publikováno v:
ACS Applied Materials & Interfaces. 13:18264-18273
In situ metal-organic chemical vapor deposition growth of SiNx passivation layers is reported on AlGaN/GaN high-electron-mobility transistors (HEMTs) without surface damage. A higher SiNx growth rate, when produced by higher SiH4 reactant gas flow, e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a90901ef020990a8b91d7ebbc010269
https://doi.org/10.1021/acsami.1c01241
https://doi.org/10.1021/acsami.1c01241
Autor:
Anupam K.C., Jonathan Anderson, Anival Ayala, Christopher Engdahl, Edwin L. Piner, Mark W. Holtz
Publikováno v:
Journal of Crystal Growth. 610:127172
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac0faf24c71d86ba5640d66381731aba
https://doi.org/10.1016/j.jcrysgro.2023.127172
https://doi.org/10.1016/j.jcrysgro.2023.127172
Autor:
Mark Holtz, Raju Ahmed, Anwar Siddique, Rony Saha, Chris Engdahl, Edwin L. Piner, Jonathan Anderson
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:8597-8606
The effect of precursor stoichiometry is reported on morphology, phase purity, and texture formation of polycrystalline diamond films. The diamond films were deposited on 100-mm Si (100) substrates using hot filament chemical vapor deposition at subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b921bb6a0b355d10091ebba38d98e36b
https://doi.org/10.1007/s10854-020-03395-7
https://doi.org/10.1007/s10854-020-03395-7
Autor:
Habib Ahmad, Ozgur Aktas, M.G. Ancona, Travis J. Anderson, Cem Basceri, Josephine Chang, Bikramjit Chatterjee, Zhe Cheng, Sukwon Choi, Volker Cimalla, W. Alan Doolittle, Tatyana I. Feygelson, Brian Foley, Daniel Francis, John T. Gaskins, Thomas Gerrer, Ashutosh Giri, Samuel Graham, Aman Haque, Eric Heller, Karl D. Hobart, Mark W. Holtz, Patrick E. Hopkins, Robert Howell, Zahabul Islam, Pavel L. Komarov, Martin Kuball, Mark E. Law, Lucas Lindsay, Elison Matioli, Callum Middleton, Codie Mishler, Alyssa L. Mock, Vladimir Odnoblyudov, David H. Olson, Bradford B. Pate, Georges Pavlidis, S.J. Pearton, Edwin L. Piner, Peter E. Raad, Fan Ren, Travis L. Sandy, Ribhu Sharma, Jingjing Shi, Daniel Shoemaker, Aditya Sood, Joseph A. Spencer, Marko J. Tadjer, John A. Tomko, Remco van Erp, Hiu-Yung Wong, Minghan Xian, Yuhao Zhang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::787bcc0ab72fa9bfb466044ab766f477
https://doi.org/10.1016/b978-0-12-821084-0.09990-x
https://doi.org/10.1016/b978-0-12-821084-0.09990-x
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c15d215f1259c993367af838a72c009
https://doi.org/10.2139/ssrn.4255783
https://doi.org/10.2139/ssrn.4255783
Autor:
Luke Yates, Mark Holtz, Mohammad Nazari, Jonathan Anderson, Samuel Graham, Raju Ahmed, Edwin L. Piner, Anwar Siddique
Publikováno v:
ACS Applied Electronic Materials. 1:1387-1399
Integration of diamond and AlGaN/GaN high-electron mobility transistors (HEMTs) terminated with an in situ grown SiNx interface layer via metal organic chemical vapor deposition is investigated. Th...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cfd3d79731d0dd67ceee108f4e14499
https://doi.org/10.1021/acsaelm.9b00131
https://doi.org/10.1021/acsaelm.9b00131
Publikováno v:
Journal of Crystal Growth. 517:28-34
We report on the effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD grown AlGaN/GaN high electron mobility transistor structures on 100 mm Si (1 1 1). A systematic study on the effect of constituent gas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::766f161f091dd6e545fda01dcbd05854
https://doi.org/10.1016/j.jcrysgro.2019.03.020
https://doi.org/10.1016/j.jcrysgro.2019.03.020
Publikováno v:
Crystal Growth & Design. 19:672-677
A new technique is reported for selective growth of polycrystalline diamond by hot filament chemical vapor deposition (HFCVD) on AlGaN/GaN-on-Si (111) wafers without degradation of the underlying l...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7af2aa2611c30165a94baf6226a09744
https://doi.org/10.1021/acs.cgd.8b01260
https://doi.org/10.1021/acs.cgd.8b01260